Allicdata Part #: | 2N5551_J05Z-ND |
Manufacturer Part#: |
2N5551_J05Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 160V 0.6A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 625... |
DataSheet: | 2N5551_J05Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 160V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5551 |
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Introduction to 2N5551_J05Z Transistors:
2N5551_J05Z transistors are a single bipolar junction transistor (BJT) that features high breakdown voltage, low leakage current, low noise and low cost, as well as low power consumption. This device is ideal for a variety of applications where high voltage level shifts and/or high current gain is required.
2N5551_J05Z Application Field:
2N5551_J05Z transistors can be used in various applications, depending on the desired response. As such, they are commonly found in audio amplifiers and mixers, radio transceivers, and line drivers. They are also used as level shifters in high voltage switching, and in voltage regulator circuits. In addition, they find use as power supply or output buffer circuits in digital logic levels converters and line drivers.
2N5551_J05Z Working Principle:
2N5551_J05Z transistors work by controlling the current flow between the collector and emitter terminals through the base connection. In an NPN-type transistor, when a current is applied to the base terminal, it forwards bias the base-emitter junction, allowing electrons to flow between the emitter and collector. The current gain of the transistor is determined by the ratio of collector current to base current, which is also called the gain factor (hFE).
In this type of transistor, the collector-emitter breakdown voltage (BVCEO) is typically between 30V and 150V depending on the particular type of transistor used. The collector-emitter saturation voltage (VCE(SAT)) is typically between 0.45V and 0.65V for a given type of transistor. The cut-off frequency (fT) of a 2N5551_J05Z transistor is typically higher than that of other transistors, typically in the range of 600-800 MHz.
Conclusion:
2N5551_J05Z transistors are versatile BJT devices that can be used in a variety of applications. These devices are cost effective and offer high breakdown voltage, low leakage current, low noise, and low power consumption. They are used in audio amplifiers and mixers, radio transceivers, level shifters in high voltage switching, and in voltage regulator circuits.
The specific data is subject to PDF, and the above content is for reference
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