2N5551RLRM

    The 2N5551RLRM is a transistor of the bipolar junction type with single NPN polarity, manufactured by ON Semiconductor. This transistor features a number of popular characteristics that set it apart from other transistors and light-emitting diodes (LEDs), making it ideal for many applications.

2N5551RLRM is designed for use in AC and DC circuit designs that require low electric power consumption, switching performance and the common-emitter characteristics of an NPN transistor. It is capable of providing medium- to high-output current, especially when used to switch low impedance loads. It is widely used in various medium- to high-power circuits as a power-control element and as an amplifier in pre-amplifiers, voltage regulators and switching power supplies.

The 2N5551RLRM is designed with a bipolar junction transistor (BJT) style and is a single NPN polarity device, meaning it can be used to control both high and low voltages. The transistor is available in several size and packaging options including the 8-DIP package, the 8-SIP package and the SMT package. It features an operating temperature range from -55°C to +150°C, a total power dissipation of 0.7 W, a collector-emitter voltage of 200 V and an emitter-base voltage of 5 V.

The 2N5551RLRM has its own bidirectional peak current gain (β) which affects its performance in various applications. Generally, transistors with a high β can handle larger current ratings and higher voltage ratings than those with a low β. For the 2N5551RLRM, the peak current gain can be determined by its Collector Base voltage (VCB) and Collector Current (IC). The β of the device is 100 mA/V at its saturation region, which is considered to be a relatively high peak current gain.

The working principle of the 2N5551RLRM is based on reducing the voltage and current across the Collector and Base terminals. By applying a relatively small amount of current to the Base terminal, the Collector current will be increased an amount proportional to the value of β. This increase in Voltage and Current across the Collector-Base junction creates an active voltage-current circuit loop that can be used to regulate the needed control inputs.

In addition to its bidirectional peak current gain, the 2N5551RLRM also features a low noise figure and a high switching speed to improve the performance of applications. It is also highly reliable and long-lasting as it is built using ON Semiconductor\'s high-quality manufacturing techniques. Ultimately, the 2N5551RLRM is an ideal choice for a variety of medium- to high-power applications due to its low power requirements and superior switching and regulating characteristics.