Allicdata Part #: | 2N5551RLRPG-ND |
Manufacturer Part#: |
2N5551RLRPG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 160V 0.6A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 625... |
DataSheet: | 2N5551RLRPG Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 160V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5551 |
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2N5551RLRPG application field and working principle
Introduction
The 2N5551RLRPG is a silicon epitaxial planar NPN bipolar junction transistor (BJT) with an integrated reverse power protection. It features high voltage, low saturation voltage, and high current rating. 2N5551RLRPG is a unique device that offers extra features such as reverse polarity protection, expanded temperature range, and excellent RF performance. It is commonly used in switching and relay applications, such as those commonly used in automotive industry.
Technical overview
2N5551RLRPG is a high voltage PNP transistor, with a maximum voltage rating of 40V, a minimum breakdown voltage of 25V, a minimum current rating of 0.02A and a maximum current rating of 0.08A. The devices feature double shielded package and gold-plated lead frame.
It is a three terminal device with two base terminals and one emitter terminal. It serves as an amplifier and modulator device.
Operation principle
2N5551RLRPG is a polarised device and must be used with correct polarity, otherwise both the device and the circuits it as attached to might fail.
The base and emitter terminals serve to control current flow from the emitter to the collector. When the base-emitter junction is forward biased, electrons from the emitter (n-region) will flow across the junction and enter the base (p-region). When electrons arrive at the base, it causes the holes accumulated in the base to "deplete" and a depletion region starts to form. This reduces the current flow dramatically and the transistor starts to act like a switch, with turn-on/off ratio up to 10:1.
Applications
2N5551RLRPG transistors are widely used in automotive, telecommunication and consumer electronics. They are used in switching and relay applications, high-voltage DC-DC converter and high-speed switching applications. They are also used in the manufacturing of integrated circuits.
2N5551RLRPG is suitable for use in a wide range of consumer applications such as in consumer electronics, home appliances, automotive, industrial and medical products. It can be used in combination with other components to form a complete power supply system.
Conclusion
2N5551RLRPG is an integral part of many switching and relay applications such as those used in the automotive and consumer electronics industries. Its operation principle is based on the use of NPN bipolar transistor in forward biased junction. It is a strong, reliable, and efficient device, suitable for a wide range of consumer applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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