2N5551TFR Allicdata Electronics

2N5551TFR Discrete Semiconductor Products

Allicdata Part #:

2N5551TFRTR-ND

Manufacturer Part#:

2N5551TFR

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 160V 0.6A TO-92
More Detail: Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 625...
DataSheet: 2N5551TFR datasheet2N5551TFR Datasheet/PDF
Quantity: 12000
2000 +: $ 0.03423
6000 +: $ 0.02977
10000 +: $ 0.02530
50000 +: $ 0.02233
100000 +: $ 0.01985
Stock 12000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N5551
Description

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The 2N5551TFR is a small signal NPN bipolar junction transistor (BJT). It is designed for general purpose medium and low-power amplification applications. The 2N5551TFR is fabricated with the latest BiCMOS technology, which combines higher efficiency with better high frequency performance. The device is provided in a small open-top SOT (surface mount technology) package, which makes it ideal for space-constrained applications, such as in portable electronic products.

The transistor contains three terminals, namely the emitter, base, and collector. The emitter is the negative terminal, while the collector is the positive terminal. When current flows through the transistor, the emitter emits an equal and opposite current that flows out of the collector. The base terminal acts to control the current flow through the transistor by either increasing or decreasing the current output.

The 2N5551TFR is primarily used in medium- and low-power amplification applications. In these applications, the transistor acts as an amplifier and allows a control signal from the base to control the amount of current that flows through the device. Some common applications for the 2N5551TFR are in audio amplifiers, video amplifiers, and switched mode power supplies. It is also used in the design of analog circuits, oscillators, computational circuits, motor controllers, relay applications and power supplies.

The working principle of a BJT is based on two distinct modes: cut-off mode and active mode. In the cut-off mode, the transistor behaves like an open switch and no current can flow between the emitter and collector; thus no amplification takes place. In the active mode, the transistor is like a closed switch and current can flow between the emitter and collector, allowing amplification to occur. The amount of current that flows is controlled by the base terminal. The current flow through the transistor can be increased by either increasing the current input to the base or by increasing the voltage applied to the base.

The 2N5551TFR has a variety of uses, including low- and medium-power amplification applications. It is also used in switched mode power supplies and motor controllers, as well as for other general purpose applications. It is designed to provide reliable performance and minimize power consumption. Its small size and surface mount technology make it an ideal choice for space-constrained applications. Additionally, the BiCMOS technology used in its fabrication provides higher efficiency and better performance at high frequencies.

The specific data is subject to PDF, and the above content is for reference

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