Allicdata Part #: | 2N697A-ND |
Manufacturer Part#: |
2N697A |
Price: | $ 1.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANS NPN 35V TO-39 |
More Detail: | Bipolar (BJT) Transistor NPN 35V 50MHz Through H... |
DataSheet: | 2N697A Datasheet/PDF |
Quantity: | 260 |
1 +: | $ 1.39230 |
10 +: | $ 1.25937 |
25 +: | $ 1.12468 |
100 +: | $ 1.01209 |
250 +: | $ 0.89964 |
500 +: | $ 0.78719 |
1000 +: | $ 0.65224 |
2500 +: | $ 0.60726 |
5000 +: | $ 0.59976 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 35V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 150mA, 10V |
Frequency - Transition: | 50MHz |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: | TO-39 |
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The 2N697A is a high performance, low power, silicon NPN transistor suitable for a range of uses in consumer and industrial electronics. It is primarily used as an amplifier or switch in signal, RF and microwave systems. The 2N697A can be found in a wide range of consumer and industrial applications such as television sets, cellular phones and portable music players. This transistor can also be used in a variety of industrial applications such as switching circuits and drivers for high voltage applications.
The 2N697A is a bipolar junction transistor (BJT). This type of transistor is based on two p-n junctions connected back to back. Usually, a single BJT contains three sections, the emitter, base and collector. In the 2N697A, the emitter is connected to the negative supply, the base is connected to the positive supply and the collector is connected to the load.
The 2N697A can be used in both linear and switching applications. In linear applications, the transistor acts as an amplifier and can be used to amplify signals, while in switching applications it can be used to turn on and off devices.
The working principle of the 2N697A is based on a phenomenon called the forward bias effect. This effect occurs when the base current is applied to the base-emitter junction of the transistor in a forward bias. This causes electrons to be attracted to the base, which in turn creates holes in the base region of the transistor\'s semiconductor material. This phenomenon causes a current flow from the emitter to the collector, which is known as collector current.
The amount of current flow from the emitter to the collector is directly proportional to the base current and is known as the current gain or amplification factor of the 2N697A. The current gain of the transistor is usually given in terms of the hFE value. The hFE value is usually small (around 1-10) for low power BJTs such as the 2N697A.
The 2N697A is a versatile transistor and can be used in many different applications. It can be used as an amplifier, switch, driver, regulators, and any other application that requires a low power transistor. It is suitable for use in linear, switching and high current applications.
In summary, the 2N697A is a high performance, low power, silicon NPN transistor that is suitable for a range of uses in consumer and industrial electronics. It is based on two p-n junctions connected back to back, and works on the principle of the forward bias effect. It can be used in both linear and switching applications, and is suitable for use in linear, switching and high current applications.
The specific data is subject to PDF, and the above content is for reference
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