2N6987

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	4 PNP (Quad)
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 10V
Power - Max:	1.5W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	14-DIP (0.300", 7.62mm)
Supplier Device Package:	TO-116

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

2N6987 Application Field and Working Principle

Transistors – Bipolar (BJT) – Arrays are a type of three-terminal semiconductor device that can be used to amplify or switch electronic signals. These transistors are manufactured in various sizes and shapes for different type of electronic applications. The 2N6987, which is a monolithic NPN array, is also known as Group C in the 2N6900/2N700 series of transistors. The 2N6987 is a high-speed Darlington array with high-gain, consisting of seven NPN transistors. This monolithic array was specifically made for the convenient usage of digital logic circuits, amplifiers and power switching applications. Emitted in the form of discrete transistors, these 2N6987 devices are capable of withstand peak repetitive voltage of 100V, and has a maximum collector-base voltage of 400V. Furthermore, the maximum current rating of these transistors is 0.1A and maximum power dissipation is 625mW. The composition of seven transistors within a single package also helps in reducing the space occupied on the printed circuit board. This 2N6987 transistor array generally consists of seven NPN transistors labelled T1 to T7. Each transistor consists of three terminals – base (B), collector (C) and emitter (E). The collector of the first transistor (T1) is connected to the lead reference (collector lead). The base of each transistor is connected to a lead (level) input, which transmits the signal being amplified. The emitters of each transistors are then connected together to the emitter lead (reference). The voltage applied to the base lead determines the amount of current that flows from the collector and through the emitter. When a signal is applied to the base of the first transistor, it causes current to flow through the transistor. This current then amplified and applied to the base of the second transistor, resulting in further amplification. This process continues, where each transistor amplifies the signal before sending it to the next transistor. As each transistor has a gain ratio greater than one, this results in a total gain of up to 7000 (7 transistors x 1000 gain). The main applications of the 2N6987 transistors include motor control circuits, switching signals and amplification circuits. These transistors can also be used as relay drivers or temperature controllers and pulse circuits. In addition, they are suitable for use in power switching applications because of their high gain, low power consumed and high speed.Overall, the 2N6987 transistor array is a versatile and high-performance device specifically made for digital logic circuits, amplifiers and power switching applications. Its high gain, high-speed and low power consumption makes this transistor an ideal choice for various industrial applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description