2N699

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	5V @ 15mA, 150mA
Current - Collector Cutoff (Max):	2µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 150mA, 10V
Power - Max:	2W
Frequency - Transition:	50MHz
Operating Temperature:	-65°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-205AD, TO-39-3 Metal Can
Supplier Device Package:	TO-39

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Introduction

The 2N699 transistor is a widely used device that is particularly useful in a variety of electronic circuits. This transistor is a single bipolar junction transistor (BJT) and is suitable for a variety of applications. In this article, we will discuss the various features of the 2N699, the applications it is most often used for and its working principle.

Features

The 2N699 is a silicon-based transistor with a unique double-sided design, which is useful in achieving fast switching times. The transistor is capable of withstanding a wide voltage range, ranging from -125 to 200 volts, and current levels in excess of up to 3.0 amps. Additionally, the 2N699 has a maximum power dissipation capability of 75 watts, making it suitable for a variety of power applications.

Application Field

The 2N699 transistors are widely used in a variety of applications and have a wide range of uses. This transistor is commonly used in audio and radio frequency circuits, and can also be incorporated into power supply circuits, feedback circuits, and digital logic circuits. Additionally, the 2N699 is often employed for high-power switching applications and can be used in switching circuit and amplifiers.

Working Principle

The 2N699 transistor works on the principle of a three-terminal device that acts as a current-controlling element. The three terminals of the transistor are the emitter, collector, and base. The base terminal is the control node, while the emitter and collector nodes serve as the output terminals of the device. In order to understand the working of the 2N699 transistor, we must understand the principle of operation. The current flow through the transistor is controlled by the application of a voltage, or current, to the base terminal. If a voltage is applied to the base, the resulting current flow will be proportional to the amount of voltage applied, and the current flow through the collector will be partially proportional to the current passing through the base. This is known as the principle of current gain, or amplification. When a voltage is applied to the base of the transistor, the level of current flowing through the collector will be increased. This can be used to increase or decrease the overall output of the transistor.

Conclusion

The 2N699 is a single bipolar junction transistor (BJT) that is particularly useful for a variety of applications, including audio and radio frequency circuits, power supplies, feedback circuits, digital logic circuits, high-power switching applications and amplifiers. The device is silicon-based and has a double-sided design, which provides fast switching times. The working of the 2N699 is based on the principle of current gain, or amplification. This occurs when a voltage or current is applied to the base terminal of the device, causing a resulting increase or decrease in the current flow through the collector terminal. The 2N699 transistor is a reliable device that is capable of withstanding a wide voltage range, current levels in excess of 3.0 amps, and a maximum power dissipation of 75 watts. In conclusion, the 2N699 transistor is an versatile device that can be used in a variety of applications. With its unique double-sided design and wide range of handling capabilities, the 2N699 is a reliable device that is suitable for use in a variety of circuits.

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