2N6901 Allicdata Electronics
Allicdata Part #:

2N6901-ND

Manufacturer Part#:

2N6901

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 100V 1.69A TO-205AF
More Detail: N-Channel 100V 1.69A (Tc) 8.33W (Tc) Through Hole ...
DataSheet: 2N6901 datasheet2N6901 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-39
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 8.33W (Tc)
FET Feature: --
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 1.07A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 1.69A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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The 2N6901 is a JFET transistor, which is a field-effect transistor. It is also a MOSFET transistor, which stands for Metal-Oxide Semiconductor Field-Effect Transistor, and it is a type of single-gate FET or IGFET (Insulated Gate Field Effect Transistor). JFETs are the most commonly used type of FETs and are used for applications such as amplifiers, switching, signal modulation, signal processing and signal conditioning. The 2N6901 is an N-channel enhancement-mode JFET transistor and is typically used for low-noise amplifiers, high-gain amplifiers, analog switches and signal generators.

JFETs are used in applications where low-power, low noise operation and high bandwidth and low distortion are desirable. They are also used in many consumer electronics applications, such as audio and video amplifiers, TV receivers and audio processors. JFETs are used in a variety of other circuits, such as active circuits, power supplies and battery-operated devices.

The 2N6901 is a monolithic JFET transistor and as such, it is a dual-gate device with both gates (the gate and the source) being insulated from the drain. The 2N6901 is constructed using a silicon nitride layer and a silicon dioxide layer. The source and drain are connected in the same way as an ordinary FET and the device is designed to have a very low drain-source resistance. The source and drain contacts are normally P-type and N-type metals, respectively. This ensures that the device has a low resistivity, which is essential for high-speed applications.

The working principle behind the 2N6901 is based on the fact that when a drain-source voltage is applied, it creates an electric field across the oxide layer, which then modulates the mobility of electrons and holes in the channel. This modulation allows the drain current to be varied according to the source voltage applied. This is the basic working principle of MOSFETs and JFETs. The 2N6901 is also a potentiometer, meaning that the drain-source resistance can be controlled by adjusting the gate voltage.

The 2N6901 is a highly useful device with a wide range of applications. It is used for a variety of analog and digital circuits, including audio and video amplifier circuits, active filters, current source circuits, level converters, voltage dividers and sample-and-hold circuits. It can also be used in switch circuits and as a voltage regulator.

The 2N6901 is a great device because it can operate at high frequencies, has a very low drain-source resistance and can be used in a variety of applications. It is also highly reliable, making it a great choice for applications requiring high reliability.

The specific data is subject to PDF, and the above content is for reference

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