2SAR523EBTL Allicdata Electronics
Allicdata Part #:

2SAR523EBTLTR-ND

Manufacturer Part#:

2SAR523EBTL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PNP 50V 0.1A EMT3F
More Detail: Bipolar (BJT) Transistor PNP 50V 100mA 300MHz 150m...
DataSheet: 2SAR523EBTL datasheet2SAR523EBTL Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 150mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: EMT3F (SOT-416FL)
Description

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2SAR523EBTL Application Field and Working Principle

The 2SAR523EBTL is a NPN single bipolar Transistors (BJT) manufactured by NXP. This transistor provides robust performance in a wide variety of applications and is cost effective.

This bipolar transistor is suitable for use in high power audio amplification, high frequency switched applications and power switching. The 2SAR523EBTL is encapsulated in an SOT89 package with an external base pin. This package option provides a tight thermal and electrical connection.

Application Field

The 2SAR523EBTL is a high power audio amplifier transistor, often used in car audio amplifiers and home audio systems. This type of transistor is ideal for very high power output applications, such as subwoofers and power amplifiers, due to its high current rating. This transistor can also be used in low frequency switching applications and power switching applications, such as controlling the speed of generators and other motor driven devices.

Working Principle

The 2SAR523EBTL is a NPN bipolar transistor, meaning that it is composed of two p-type (positive) and one n-type (negative) semiconductor layer. When a small voltage is applied to the base electrode, current flows from the collector to the emitter. This small current flow then allows a larger current to flow from the collector to the emitter and allows the transistor to amplify signals. The amplitude of the voltage gain is controlled by adjusting the base current.

The 2SAR523EBTL has a high current rating, which makes it well suited for power applications. Additionally, this transistor has low noise characteristics, which allows it to be used in high fidelity audio systems. Furthermore, the package is quite robust, making it an ideal choice for strong thermal and electrical connections.

Conclusion

The 2SAR523EBTL is an NPN single bipolar Transistors (BJT) manufactured by NXP. This transistor provides robust performance in a wide variety of applications and is cost effective. It is suitable for use in high power audio amplification, high frequency switched applications and power switching. This transistor has a high current rating and low noise characteristics, which makes it ideal for power and audio applications. Additionally, the package option provides a tight thermal and electrical connection.

The specific data is subject to PDF, and the above content is for reference

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