2SAR554PFRAT100 Allicdata Electronics
Allicdata Part #:

2SAR554PFRAT100TR-ND

Manufacturer Part#:

2SAR554PFRAT100

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: PNP DRIVER TRANSISTOR (CORRESPON
More Detail: Bipolar (BJT) Transistor PNP 80V 1.5A 340MHz 500mW...
DataSheet: 2SAR554PFRAT100 datasheet2SAR554PFRAT100 Datasheet/PDF
Quantity: 1000
1 +: $ 0.11000
10 +: $ 0.10670
100 +: $ 0.10450
1000 +: $ 0.10230
10000 +: $ 0.09900
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Power - Max: 500mW
Frequency - Transition: 340MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3
Description

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The 2SAR554PFRAT100 is a dual PNP transistor from Toshiba Semiconductor. It is composed of two independent PNP transistors in a single package and is classified as a Bipolar Junction Transistor (BJT). It is typically used for small signal amplifying, switching and general purpose applications.

The 2SAR554PFRAT100 has a package size of SOT-23-5, with the two transistors connected in parallel. It has an operating temperature range of -65C to +150C, a maximum collector-emitter voltage of 30V, and a maximum collector current of 1.5A. It also has a typical DC current gain between 10 and 100 and a minimum breakdown voltage of 10V.

In terms of its operating principle, the 2SAR554PFRAT100 relies on the action of a PNP transistor to amplify its input voltage. As electricity passes through a PNP transistor, the base-emitter junction will become forward-biased, allowing current to flow from the emitter to the base. As the current increases, the emitter-collector junction will become forward-biased, allowing current to flow from the collector to the emitter. This will result in an increased output voltage.

The 2SAR554PFRAT100 is commonly used in small signal amplifying applications such as audio amplifiers, RF amplifiers, and transceivers. It can also be used in switching applications, as it can be used to control the on/off state of an electrical device by using the input signal to the base of the transistor. Finally, it can be used for general purpose applications such as signal switching, voltage regulated power supplies, and power inverters.

To summarize, the 2SAR554PFRAT100 is a dual PNP transistor from Toshiba Semiconductor. It is classified as a Bipolar Junction Transistor (BJT) and is used for small signal amplifying, switching, and general purpose applications. It has an operating temperature range of -65C to +150C, a maximum collector-emitter voltage of 30V, and a typical DC current gain between 10 and 100. Its operating principle relies on the action of a PNP transistor to amplify its input voltage, and it is commonly used in small signal amplifying applications such as audio amplifiers, RF amplifiers, and transceivers, as well as for switching and general purpose applications.

The specific data is subject to PDF, and the above content is for reference

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