2SAR533PFRAT100

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 50mA, 1A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 50mA, 3V
Power - Max:	500mW
Frequency - Transition:	300MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	MPT3

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2SAR533PFRAT100 Application Field and Working Principle

The 2SAR533PFRAT100 is a type of bipolar junction transistor commonly used in power electronic applications. This transistor is well known for its high performance and high reliability in power management.

Introduction to 2SAR533PFRAT100

The 2SAR533PFRAT100 is a bipolar junction transistor manufactured by Toshiba. It is used in power electronic applications because its features offer significant performance and reliability improvements over traditional components. The 2SAR533PFRAT100 is a two-terminal device made up of a PNP-structure NPN-structure. It is rated for 500V and has a 1500mA current flow capability.

Application Fields

The 2SAR533PFRAT100 transistor is primarily used in power electronics applications. It is ideal for applications where high voltage, high current, and high switching frequency are required. It is widely used in switching power supply, AC/DC convertors, relays, voltage regulators, electronic motor controls, etc. The device is also widely used in motion control applications such as brushless DC motors, servo motors, robotic arm and linear motors. Its high switching frequency enables it to be used in high speed applications where the switching of the transistor needs to be done very quickly.

Working Principle

The 2SAR533PFRAT100 transistor works on the principle of the bipolar junction transistor (BJT). It consists of two layers, the collector - base and the emitter - base junction. The operation of the transistor is based on the current flowing from the collector to the emitter and vice versa.When no current is supplied to the base, no current will flow from the collector to the emitter, and the transistor acts as an open switch. However, when a current is applied to the base, it causes the collector - base junction to become forward biased, allowing current to flow from the collector to the emitter. The amount of current flowing between the collector and the emitter depends on the size of the current at the base. This current is known as the collector current, and it is directly proportional to the current supplied at the base.

Conclusion

The 2SAR533PFRAT100 is a bipolar junction transistor used in power electronic applications. It is known for its high performance and high reliability in power management and control applications. Its high switching frequency makes it ideal for applications requiring fast switching. The device works on the principle of the bipolar junction transistor, where current flows from the collector to the emitter when a voltage is applied to the base.

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