![2SAR512PFRAT100 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | 2SAR512PFRAT100TR-ND |
Manufacturer Part#: |
2SAR512PFRAT100 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | PNP DRIVER TRANSISTOR (CORRESPON |
More Detail: | Bipolar (BJT) Transistor PNP 30V 2A 430MHz 500mW S... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 35mA, 700mA |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 100mA, 2V |
Power - Max: | 500mW |
Frequency - Transition: | 430MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | MPT3 |
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The 2SAR512PFRAT100 is a single bipolar junction transistor (BJT). As a semiconductor device, it is used to amplify electrical signals and switch electrical circuits. This article explores the application field and working principle of this BJT.
Structure of the 2SAR512PFRAT100
The 2SAR512PFRAT100 is a single bipolar junction transistor (BJT), consisting of three different regions: the emitter, the base, and the collector, connected with three different dopant types. Each region is divided into a region of high and low conductivity, known as the P-type and N-type respectively. Current flow through the junction between the P-type and N-type regions is dependent on the differences in the potentials of the two regions.
Application Field of the 2SAR512PFRAT100
The 2SAR512PFRAT100 BJT can be used in a wide range of applications, such as amplifying electrical signals, switching electrical and electronic circuits, as well as logic circuits. The advantage of BJTs over other types of transistors is their greater current gain and higher switching speed, meaning that they are often used as signal amplifiers, switches, and in high voltage circuits since they can handle large inputs and outputs. Additionally, BJTs are commonly used as power sources, such as in solar panels, moving solar energy to an electrical device.
Working Principle of the 2SAR512PFRAT100
The working principle of the 2SAR512PFRAT100 BJT comes from the fact that the base region is essentially a semiconductor. When a voltage is applied to the base region of the BJT, a current is induced in the collector region (which is greater than the current in the base yield a gain). This gain is dependent on the current ratio of the base current to collector current, known as the current transfer ratio.
In the 2SAR512PFRAT100 BJT, the base-emitter voltage is typically 0.7 volts. When a current is passed through the base region of the BJT, it causes the current in the collector region to increase by a factor proportional to the current flow in the base. This increased current flow is what gives the 2SAR512PFRAT100 its high gain, making it ideal for amplification as well as switching applications.
Conclusion
The 2SAR512PFRAT100 is a single bipolar junction transistor, commonly used for amplification and switching applications. It has a high current gain and a fast switching speed, making it attractive for high power circuits. Its working principle is based on the fact that the base region can be used to induce a current flow in the collector, resulting in a high current gain.
The specific data is subject to PDF, and the above content is for reference
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