2SAR293P5T100 Allicdata Electronics
Allicdata Part #:

2SAR293P5T100TR-ND

Manufacturer Part#:

2SAR293P5T100

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: PNP MIDDLE POWER DRIVER TRANSIST
More Detail: Bipolar (BJT) Transistor PNP 30V 1A 320MHz 500mW S...
DataSheet: 2SAR293P5T100 datasheet2SAR293P5T100 Datasheet/PDF
Quantity: 1000
1 +: $ 0.08000
10 +: $ 0.07760
100 +: $ 0.07600
1000 +: $ 0.07440
10000 +: $ 0.07200
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Power - Max: 500mW
Frequency - Transition: 320MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3
Description

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The 2SAR293P5T100 is a single bipolar junction transistor (BJT) device. It is a type of transistor, which contains three terminals: a base, a collector, and an emitter. This transistor has a 300V collector-emitter voltage, a voltage gain of typically 5000 at the current of 5mA, and a maximum collector current of 5A. As such, it can be used for power management applications, such as switching and amplification.

Generally speaking, a bipolar transistor is a semiconductor device that is used to amplify electrical signals or to switch electric currents.In a bipolar transistor, there are two types of current paths, an emitter region and a collector region. The emitter region is provided with a direct current (DC) source, while the collector region is connected to the output circuit. When a voltage is applied to the base, it injects charge carriers into the emitter and collector regions, which then create a current flow in the circuit.

The working principle of the 2SAR293P5T100 is based on the BJT structure. Its collector and emitter terminals are in turn connected to the base and emitter regions of the transistor. When a voltage is sourced to the base, this starts the flow of electrons between the emitter and the collector, causing current to flow between the collector region and the output of the circuit. The gain of the transistor is dependent upon the alpha or the current gain, hFE, which is the ratio of collector current to base current.

The 2SAR293P5T100 is a reliable power management component that can be used for various applications, such as motor control, AC line protection, audio and video amplifier, and digital logic control. It can also be used for medium to high power switching and amplification as it has a much higher collector current (5A) and gain (5,000) than other BJTs with a similar Collector-Emitter Voltage.

Due to its high collector current and voltage ratings, the 2SAR293P5T100 device has a wide range of applications in power management and power electronics. It can be used to control motors in industrial applications, AC line protection in domestic equipment, audio and video amplifier, audio power amplifier and other power management functions where high current, high voltage and high gain components are required.

In conclusion, the 2SAR293P5T100 is a type of single bipolar junction transistor (BJT). It has a high voltage rating, current gain and maximum collector current, making it suitable for power management applications such as motor control, AC line protection, audio and video amplifier, and digital logic control. This device has had a wide range of applications in power management and power electronics, and is a reliable, cost effective component for these applications.

The specific data is subject to PDF, and the above content is for reference

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