2SAR553P5T100 Allicdata Electronics
Allicdata Part #:

2SAR553P5T100TR-ND

Manufacturer Part#:

2SAR553P5T100

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: PNP -50V -2A MEDIUM POWER TRANSI
More Detail: Bipolar (BJT) Transistor PNP 50V 2A 320MHz 500mW S...
DataSheet: 2SAR553P5T100 datasheet2SAR553P5T100 Datasheet/PDF
Quantity: 1000
1 +: $ 0.11000
10 +: $ 0.10670
100 +: $ 0.10450
1000 +: $ 0.10230
10000 +: $ 0.09900
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Power - Max: 500mW
Frequency - Transition: 320MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3
Description

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The 2SAR553P5T100 transistor is a type of BJT transistor that is classified into the single-type bipolar transistors family. Generally, BJT transistors are used to amplify and switch electronic signals, and they differ from FET transistors, which are generally just used as single-cycle switches. The specific 2SAR553P5T100 transistor has a PNP configuration, and its basic application field and working principle are explored in this article.

In general, the 2SAR553P5T100 is a discrete semiconductor device that is designed for general-purpose amplification and switching applications. This type of transistor features a high breakdown voltage rating of 500V, which makes it particularly suited for power applications such as mains transformers. It also has an average gain of 10, which is high enough for use in applications requiring high gain. The maximum current rating of this transistor is also quite high, at 150mA, allowing it to be used in current-intensive circuits.

As far as the working principle of the 2SAR553P5T100 is concerned, it operates on the basis of BJT physics. It consists of three layers of doped semiconductor material, which are arranged in a vertical stack. It has two charged electrodes, the emitter and the collector, separated by a layer of semiconductor material called the base. When a current is applied to the base, the transistor starts to conduct, allowing the current to flow from the emitter to the collector. The gain of the transistor, or the ratio between the output current and the input current, is determined by the resistance of the base layer.

The primary application fields for the 2SAR553P5T100 transistor are general-purpose amplification, switching, and power supply applications. In switching applications, this transistor can be used to create switching circuits with multiple on and off states. In amplification applications, it can be used to amplify low-level signals. In power supply applications, it can be used to create voltage regulators and other power management devices. In addition, this transistor can also be used in logic circuits and as part of frequency filters.

In conclusion, the 2SAR553P5T100 transistor is an excellent choice for amplification and switching applications. It has a high breakdown voltage rating and a good average gain, making it suitable for current-intensive and power circuitry. Its basic application fields and working principle are based on BJT physics and make it perfectly suited for switching, amplification, and power supply applications. With its excellent performance and reliability, the 2SAR553P5T100 transistor is one of the most widely used transistors in the market today.

The specific data is subject to PDF, and the above content is for reference

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