2SAR522UBTL Allicdata Electronics
Allicdata Part #:

2SAR522UBTLTR-ND

Manufacturer Part#:

2SAR522UBTL

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PNP 20V 0.2A UMT3FM
More Detail: Bipolar (BJT) Transistor PNP 20V 200mA 350MHz 200m...
DataSheet: 2SAR522UBTL datasheet2SAR522UBTL Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02024
6000 +: $ 0.01826
15000 +: $ 0.01588
30000 +: $ 0.01429
75000 +: $ 0.01270
150000 +: $ 0.01058
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Power - Max: 200mW
Frequency - Transition: 350MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: UMT3F
Description

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The 2SAR522UBTL is a single-type bipolar junction transistor (BJT), a current-operated three-terminal semiconductor device. It is often used for amplifier or switching applications in consumer electronics, communications, and computer engineering. In particular, it is employed in audio power amplifier and low-noise amplifier (LNA) applications, as well as in variety of other applications such as power switch, drivers and protection circuit purposes.

The 2SAR522UBTL\'s maximal continuous collector current is 560mA, and its collector-emitter breakdown voltage is 40V. It also has a collector-base breakdown voltage of 60V and an emitter-base breakdown voltage of 6V. This type of BJT is available as a PNP-type device as well, with the same parameters.

The BJT is a current-controlled device - its current amplification factor is hFE, which is the ratio of the output current to the input current. The 2SAR522UBTL has an hFE rating of up to 150, depending on its current gain. The higher the current gain, the better its amplification capabilities; however, BJTs with high current gains also have a higher input capacitance, which makes them more prone to noise.

In order to understand the working principle of the 2SAR522UBTL, one must first understand the terms base, collector, and emitter. The base is the center part of the transistor, between the collector and the emitter. The collector is the electrode which is connected to the voltage source, and the emitter is the electrode which is connected to ground. When a voltage is applied to the base, current flows from the collector to the emitter, allowing for current amplification.

When the base is driven with a small current from the external circuit, the transistor becomes "ON" and the current flowing from collector to emitter flows as a collector current, which is bigger than the base current. This amplification of current is a key concept in BJT operation, and is the principle behind current gain hFE. The collector-emitter voltage is also amplified, and is a measure of the transistor\'s ability to amplify the voltage.

When the base current is reversed, the transistor becomes "OFF" and the current flowing is drastically reduced. This is the principle behind switch-type BJT applications, where a small control voltage is used to switch the BJT on and off.

The 2SAR522UBTL is one of the most widely used versions of the BJT transistor, due to its wide range of applications. It is suitable for use in audio power amplifier and low-noise amplifier (LNA) applications, as well as in variety of other applications such as power switch, drivers and protection circuit purposes. It is also used for switching widely in consumer electronics and communications, given its ability to switch rapidly and with little power dissipation.

The specific data is subject to PDF, and the above content is for reference

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