2SB0949AQ

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP - Darlington
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	2.5V @ 8mA, 2A
Current - Collector Cutoff (Max):	2mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	2000 @ 2A, 4V
Power - Max:	2W
Frequency - Transition:	20MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F-A1

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Introduction

2SB0949AQ is a single bipolar junction transistor (BJT) that is used in several applications. It is available in two packages including TO-220 and SOT-223. The 2SB0949AQ is a PNP transistor, so it functions as an N-type semiconductor which has been shown to be good for high speed applications. Further, 2SB0949AQ has a current gain of 40 when operated in the common emitter (CE) configuration.

Application Fields

2SB0949AQ is widely used in applications requiring high speed and low power consumption. It is commonly used in power amplifiers, switches, and amplifiers. This transistor can also be used in applications where high speed logic is required, such as decoders and Arithmetic Logic Units (ALUs). Further, 2SB0949AQ can be used for power switching and control circuits. The transistor is also suitable for applications that need low noise signal amplification as well as high current pulse applications. 2SB0949AQ is also used in DC-DC converters, switch mode power supplies, switching regulators, and other various kinds of power electronics. It has been used in several commercial products such as computers, television receivers, and stereo amplifiers. This PNP transistor is often used in high-speed signal processing, automotive and communication systems.

Working Principle

2SB0949AQ is a bipolar junction transistor (BJT) which works on the principle of negative feedback. As current is applied to its base terminal, the rate of carrier recombination increases, resulting in a decrease in current gain. When the applied current is reduced, the rate of carrier recombination also decreases, resulting in an increase in current gain. This phenomenon is known as the “common emitter effect” and is used in this transistor to control the current gain. The working of 2SB0949AQ can be better understood by its construction. It consists of three regions - the collector, base and emitter. The function of the collector is to collect charge carriers. The base serves as a transfer medium between the emitter and collector. The emitter on the other hand supplies the majority carriers to the transistor. The current gain of the transistor is determined by the ratio of the emitter current to the collector current. 2SB0949AQ works in such a way that the input current applied to its base will result in an output current from its collector with a current gain of up to 40. This gain can be adjusted by changing the amount of current applied to the base terminal.

Conclusion

2SB0949AQ is a single bipolar Junction transistor (BJT) that is commonly used in applications requiring high-speed and low power consumption. It has a current gain of up to 40 when operated in the common emitter (CE) configuration. The transistor works on the principle of negative feedback and it is constructed of three regions - the collector, base and emitter. 2SB0949AQ is a versatile device that can be used in numerous applications including power amplifiers, switches, amplifiers, DC-DC converters, switch mode power supplies, and switching regulators.

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