Allicdata Part #: | 2SB09510P-ND |
Manufacturer Part#: |
2SB09510P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PNP DARL 60V 8A TO-220F |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 60V 8A 2... |
DataSheet: | 2SB09510P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 8mA, 4A |
Current - Collector Cutoff (Max): | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 4000 @ 4A, 3V |
Power - Max: | 2W |
Frequency - Transition: | 20MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F-A1 |
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The 2SB09510P is a device in the category of general-purpose transistors. It belongs to the family of single bipolar junction transistors, also known as BJT. These devices can be used to switch or amplify a signal or perform other functions that involve controlling current or voltage. With its high voltage, high current and low noise properties, the 2SB09510P is suitable for a wide range of applications. It is also capable of withstanding high temperatures and is often used in harsh environments.
The 2SB09510P has an NPN configuration, meaning that it has an emitter, a base, and a collector. The base is connected to the positive voltage, and the collector and emitter are both connected to the ground. When a positive voltage is applied to the base, current starts flowing through the device and the voltage across the collector-emitter is reduced. This voltage reduction is what causes the transistor to switch on, allowing it to be used as an electronic switch.
The main advantage of the 2SB09510P over other types of transistors is its high voltage and current capability. It can handle voltages up to 62V and currents up to 10A. This makes it suitable for applications where high current and voltage are needed, such as in high power amplifiers and power supplies. The 2SB09510P also has a high breakdown voltage, which is the voltage at which the device stops functioning, preventing it from being damaged.
The 2SB09510P also has low noise characteristics. This is because its base region is comparatively small and this reduces the number of electrons that get thermally excited, resulting in less noise. The 2SB09510P is also a fast-switching device, meaning that it can switch quickly from one level of voltage to another. This makes it suitable for use in high-frequency applications, such as pulse-width modulation signals.
The 2SB09510P can be used in a wide range of applications, such as audio amplifiers, radio receivers, and high power switching circuits. It can be used to switch the on/off state of an audio amplifier or to amplify an audio signal. It can also be used to switch power supplies or control the speed of DC motors. Its high voltage and current capability make it suitable for use in a variety of power supply and stereo amplifier designs.
The 2SB09510P is a transistor with a wide range of applications. Its large current and voltage capability, as well as its low noise characteristics make it well suited for use in amplifiers and power supplies. Its fast switching capability also makes it great for use in high-frequency applications. It is a reliable device for powering high-performance devices.
The specific data is subject to PDF, and the above content is for reference
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