2SC3357-T1-RF-A Allicdata Electronics
Allicdata Part #:

2SC3357-T1-RF-A-ND

Manufacturer Part#:

2SC3357-T1-RF-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: SAME AS NE85634 NPN SILICON MEDI
More Detail: RF Transistor NPN 12V 100mA 6.5GHz 1.2W Surface Mo...
DataSheet: 2SC3357-T1-RF-A datasheet2SC3357-T1-RF-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Gain: 10dB
Power - Max: 1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89
Description

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The 2SC3357-T1-RF-A transistors are a very popular part of the Bipolar Junction Transistor (BJT) family. This transistor is designed for use in a variety of radio frequencies (RF) applications. It has special capabilities that make it suitable for many different uses.

The 2SC3357-T1-RF-A transistors are low-power NPN bipolar-type transistors with a collector-base voltage rating of 25 volts. They are also rated to handle a maximum current of 1.5 amps. Their frequency rating is up to 200 MHz, which makes them well-suited for a wide range of RF-type applications.

These transistors are made using ultra-small and ultra-thin semiconductor layers. This provides the devices with effectively low parasitics and a low-leakage design. This allows for the high-frequency to be effectively utilized, thus giving the transistors a wider range of applications.

The 2SC3357-T1-RF-A transistors also feature a low-noise transistor configuration, which reduces any unwanted background noise associated with the part. This helps to maintain device reliability and improve overall performance. Their low-capacitance also helps to reduce the effects of capacitive coupling.

The 2SC3357-T1-RF-A transistors are suitable for use in many applications including RF signal amplifiers, broadcast receivers, and wireless communication systems. They are also used in high-speed switching operations, providing fast switch-off times.

The working principle of the 2SC3357-T1-RF-A transistors is based on the voltage gain versus current gain of the device. It utilizes a combination of resistors and capacitors to achieve the desired signal or current gain. This increase in current or voltage is called gain, and it is the key to providing amplifier circuits with high-performance signals.

In addition, the 2SC3357-T1-RF-A transistors also rely on a negative feedback design to improve the performance of the device. Negative feedback is a type of signal processing that reduces the signal strength by a certain amount and redirects the signal back to its source. This helps to reduce any unwanted noise or distortion associated with the signal.

The 2SC3357-T1-RF-A transistors are designed for a wide range of RF applications. From signal amplification to switching operations, these devices are a great choice for a variety of applications. With their ultra-small size and low-noise configuration, they provide users with reliable and high-performance components.

The specific data is subject to PDF, and the above content is for reference

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