Allicdata Part #: | 2SC3328-OT6KEHF(M-ND |
Manufacturer Part#: |
2SC3328-O,T6KEHF(M |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 2A 80V TO226-3 |
More Detail: | Bipolar (BJT) Transistor NPN 80V 2A 100MHz 900mW T... |
DataSheet: | 2SC3328-O,T6KEHF(M Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 1A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 500mA, 2V |
Power - Max: | 900mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | LSTM |
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The 2SC3328-O,T6KEHF(M) is a bipolar transistor. Also known as a BJT single, this transistor is an active type device with a three-terminal structure consisting of an emitter, a base, and a collector. The 2SC3328-O,T6KEHF(M) is often used in various electronic application fields, such as communication and power controlling devices, and is capable of providing high frequency amplification and switching operations. By utilizing the emitter-base and collector-base junction breakdown voltage and collector-base cut-off current, this device can be effectively used in various applications.
This device has many features that make it ideal for a variety of applications, such as high frequency amplification, low power electronics, static switching, high voltage switching, and current control. It has a low saturation voltage, high gain and excellent power performance, a wide range of operating frequencies, and a low noise level. It is also known for its durability and reliability, and can withstand higher temperatures and harsher conditions than other transistors.
The 2SC3328-O,T6KEHF(M) has a basic working principle where it uses the phenomenon of thermionic emission. Thermionic emission occurs when the temperature of the emitting material is higher than the temperature of its surroundings. This creates a ratio of positive ions to electrons, that then gives off a potential difference. This potential difference works to draw electrons from the emitting material towards the base which then creates a flow of current.
The application fields in which the 2SC3328-O,T6KEHF(M) can be utilized are vast and varied. It is often used in automotive electronics, computer peripheral devices, telecommunication systems, power supplies, medical systems, and various other electronic systems. This device can be used in logic operations, high-speed switching, and various current and voltage controlling applications.
In summary, the 2SC3328-O,T6KEHF(M) is a bipolar transistor, compiritive with other transistors due to its good performance on temperature, high frequency amplification, low power consumption, and its relatively easy application in wide area of application fields. It is a device that is highly reliable and durable, making it an excellent choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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