2SC39320TL Allicdata Electronics

2SC39320TL Discrete Semiconductor Products

Allicdata Part #:

2SC39320TLTR-ND

Manufacturer Part#:

2SC39320TL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN HF AMP 20VCEO SMINI 3P
More Detail: RF Transistor NPN 20V 50mA 1.6GHz 150mW Surface Mo...
DataSheet: 2SC39320TL datasheet2SC39320TL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.6GHz
Noise Figure (dB Typ @ f): --
Gain: 20dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 2mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SMini3-G1
Base Part Number: 2SC3932
Description

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2SC39320TL is a NPN-type silicon planar CE RF transistor manufactured by Toshiba Semiconductor. It is designed for applications where high gain, high linearity and larger current-handling capacity are desired. The device operates in the frequency range from 30MHz to 600MHz and provides output powers up to 0.1 watts. It features a low collector-emitter capacitance that provides good linearity performance at low bias levels. It is also capable of providing high gain with a low current consumption, making it suitable for high power linear amplifier applications.

2SC39320TL is designed for applications such as VHF/UHF transmitters, FM television broadcast, cordless telephones, computer peripheral devices and other wireless systems. It is used in the linear mode, providing a high efficiency and low distortion level in order to meet high fidelity sound quality in data transmission applications. With its low noise figure, it is also suitable for use in receivers.

The main feature of 2SC39320TL is its working principle of surface emission effect. In this type of transistor, the emitted electrons create a conductive path between the base and the emitter contacts, which is called the minority carrier current. The current called the emitter current is the sum of the minority carrier current, the hole current generated in the emitter and the hole current generated in the base. This current is modulated by the base current. The current gain is determined by the ratio of the current injected into the base to the current extracted from the collector.

The 2SC39320TL has a collector-emitter voltage of 30V, a collector-base voltage of 10V and a collector current of 1.5A. It has a high gain of up to 50 at 900 MHz and a high power output of 0.1 watts. It features a high output power-addition efficiency, which ensures that it can be used for long-range applications. Its power distribution is even across the frequency range, providing a wide dynamic range. Its low current noise makes it suitable for a wide range of applications.

The 2SC39320TL is an excellent choice for applications where high linearity, wide dynamic range and low noise are required. It is suitable for use in VHF/UHF transmitters, FM television broadcast, cordless telephones, computer peripheral devices and other wireless systems. Its features make it an ideal choice for high power linear amplifier applications.

The specific data is subject to PDF, and the above content is for reference

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