Allicdata Part #: | 2SC3326-BLFTR-ND |
Manufacturer Part#: |
2SC3326-B,LF |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 20V 0.3A S-MINI |
More Detail: | Bipolar (BJT) Transistor NPN 20V 300mA 30MHz 150mW... |
DataSheet: | 2SC3326-B,LF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.04763 |
6000 +: | $ 0.04287 |
15000 +: | $ 0.03810 |
30000 +: | $ 0.03572 |
75000 +: | $ 0.03175 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 300mA |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 3mA, 30mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 350 @ 4mA, 2V |
Power - Max: | 150mW |
Frequency - Transition: | 30MHz |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236 |
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The 2SC3326-B,LF is classified as a single, bipolar junction transistor (BJT) type device. It is suitable for a wide range of applications, from low- frequency power amplifiers to high-frequency impedance matching for receivers and transmitters. The 2SC3326-B,LF is a versatile device offering an excellent low-noise character and wide bandwidth for high-frequency applications. This article discusses the application field and working principle of the 2SC3326-B,LF device.
The 2SC3326-B,LF is an NPN bipolar transistor with an epoxy molded plastic lead frame. It operates over a wide range of temperature and is a reliable, economical and versatile device. The 2SC3326-B,LF is designed specifically for use in digital and analog circuits where low-noise performance and wide frequency operation is required. The device has a high gain and low capacitance, which makes it suitable for use in high-speed digital and switching applications.
The 2SC3326-B.LF is widely used in low-frequency power amplifiers and radio receivers. It is used in low-noise amplifiers, audio amplifiers, and oscillators. It is also commonly used for impedance matching for receivers and transmitters, as well as for connecting to modems, DSSs, and add-on memory chipsets. It is also suitable for use in small cell phones, cordless phones, PDA\'s, and other communications applications.
The working principle of the 2SC3326-B,LF consists of three basic components: the base, collector, and emitter. The base is used to control the amount of current that flows through the collector-emitter junction. The collector receives the current from the base and passes it on to the emitter. When the base current is increased, the emitter voltage will drop, leading to a decrease in collector-emitter voltage and a corresponding decrease in current. Conversely, when the base current is decreased, the emitter voltage will rise, leading to an increase in collector-emitter voltage and a corresponding increase in current.
The 2SC3326-B,LF is an ideal device for a wide range of applications. It is a reliable, economical, and versatile transistor that offers excellent low-noise performance and wide frequency operation. Its wide frequency operation and low noise make it an ideal choice for high-speed digital and switching applications. The device\'s high gain and low capacitance makes it suitable for applications in low-frequency power amplifiers, radio receivers, and impedance matching for receivers and transmitters.
The specific data is subject to PDF, and the above content is for reference
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