2SC3646T-P-TD-E Allicdata Electronics
Allicdata Part #:

2SC3646T-P-TD-E-ND

Manufacturer Part#:

2SC3646T-P-TD-E

Price: $ 0.20
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 100V 1A
More Detail: Bipolar (BJT) Transistor NPN 100V 1A 120MHz 500mW ...
DataSheet: 2SC3646T-P-TD-E datasheet2SC3646T-P-TD-E Datasheet/PDF
Quantity: 1000
1000 +: $ 0.17993
Stock 1000Can Ship Immediately
$ 0.2
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Power - Max: 500mW
Frequency - Transition: 120MHz
Operating Temperature: --
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP
Description

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2SC3646T-P-TD-E is a type of bipolar transistor, also known as BJT, which stands for Bipolar Junction Transistor. It is a type of single junction transistor and has been used in many applications and it is quite popular due to its low cost and reliable performance. It has two terminals, the collector and the emitter. The collector is used to connect the power source in order for the transistor to operate, while the emitter is used to pass the current. The working principle of the BJT is fairly simple. When a current is applied to the base of the transistor, it causes the electrons to flow from the collector to the emitter. As the voltage across the base-emitter junction increases, more electrons are drawn in, causing an increase in the current flow from the collector to the emitter.

The 2SC3646T-P-TD-E can be used in a wide range of applications, including discrete switching and amplifying duties, radio frequency and microwave amplifiers, and drive circuit applications. It has a wide range of operating temperature and current ranges, making it suitable for use in a variety of different applications. It is also commonly used as a substitution for other types of single junction transistors, such as the 2N3055, 2N3904 and 2N2222. It has a relatively low switching speed and it is able to withstand large temperature ranges without damaging the device.

Due to its low cost and reliable performance, the 2SC3646T-P-TD-E is used in many different applications. It is found in many consumer electronics, including television sets, remote controls, cellular phones, and computers. It is also used in industrial devices, such as motion control systems, air conditioning systems, and elevators. It is also used in automotive applications, such as the electronic engine control system, ignition system, and fuel injection system. In addition, it is used in aviation and aerospace applications, including guidance systems and servo systems.

To conclude, the 2SC3646T-P-TD-E is a type of single junction bipolar transistor, also known as a BJT. It has two terminals, the collector and the emitter, and its working principle is fairly simple. It is used in many different applications, from consumer electronics to aerospace applications, due to its low cost and reliable performance. It is a versatile device and can be used as a substitute for other types of single junction transistors.

The specific data is subject to PDF, and the above content is for reference

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