2SC39360CL Allicdata Electronics

2SC39360CL Discrete Semiconductor Products

Allicdata Part #:

2SC39360CLTR-ND

Manufacturer Part#:

2SC39360CL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN 20V 0.03A SMINI-3
More Detail: Bipolar (BJT) Transistor NPN 20V 30mA 230MHz 150mW...
DataSheet: 2SC39360CL datasheet2SC39360CL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
Power - Max: 150mW
Frequency - Transition: 230MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SMini3-G1
Base Part Number: 2SC3936
Description

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2SC39360CL is an NPN transistor which belongs to the Single Bipolar Transistor (BJT) family. This silicon transistor comes in a TO-254AA package and is used in various applications. The package has been designed to be used in small space and up to 8 watt power dissipation.

2SC39360CL has a maximum collector current rating of 1A, voltage rating of 30V, and a DC current gain of 100. This transistor has also been designed for a high frequency range up to 30MHz. The maximum power dissipation of 2SC39360CL is 8W and °C/W thermal resistance meets the needs of high power applications.

Applications of 2SC39360CL include power switches, voltage regulators, RF amplifiers and communication circuits. This device provides excellent power balance between the collector and emitter. Furthermore, it exhibits temperature stability characteristics, making it suitable for operating in extreme heat or cold environments. It is also capable of providing high performance in high-power applications.

The working principle of 2SC39360CL is based upon the four terminals: base, emitter, collector, and common (the substrate). A small inject of current through the collector-base junction causes a larger current flow from collector to the emitter. When the base-emitter junction is forward biased, minority carriers from the emitter cause the collector-base junction to become more forward biased resulting in a larger collector current. This process is known as transistor action and the device is used to act as an amplifier, switch, or both.

2SC39360CL is suitable for numerous industrial and consumer grade applications due to its high current, voltage, and power ratings. The device also offers reliable operation, good heat dissipation, and small size for minimal space constraints. The high frequency operation and excellent power balance are also big advantages of this transistor.

The specific data is subject to PDF, and the above content is for reference

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