Allicdata Part #: | 2SC3225T6ALPSF(M-ND |
Manufacturer Part#: |
2SC3225,T6ALPSF(M |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 2A 40V TO226-3 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 2A 220MHz 900mW T... |
DataSheet: | 2SC3225,T6ALPSF(M Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 1mA, 300mA |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 500 @ 400mA, 1V |
Power - Max: | 900mW |
Frequency - Transition: | 220MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92MOD |
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The 2SC3225,T6ALPSF(M) transistor is a common type of bipolar transistor or BJT. It belongs to a family of single transistors, meaning it uses a single pole, which is basically a two-layer sandwich made up of zones of different types of material. The layers are called an emitter region and a base region. When used, the transistor works by applying a voltage across the base and the emitter. This causes an electric current to flow from the emitter to the base, driven by the movement of ‘holes’ in the emitter layer. This current then triggers a current in the collector layer, thus controlling the flow of current.
The 2SC3225,T6ALPSF(M) transistor is ideal for use in power switching and low power amplifier applications. The transistor has a low RDS (on) resistance, allowing for less power to be used when switching without reducing power levels. Its high current gain makes it suitable for use in audio amplifiers, electric window motors, and medical instrumentation. Its low voltage threshold ensures that the transistor switches on and off when the voltage level moves above and below the threshold level. This characteristic makes the 2SC3225,T6ALPSF(M) ideal for use in regulating circuits.
The 2SC3225,T6ALPSF(M) transistor also has a high power factor due to its excellent switching characteristics. It has a high current capability and low on-resistance, meaning it is capable of providing high power to the load. At the same time, the on-resistance of the transistor means that it can dissipate heat quickly, making it suitable for applications where power dissipation needs to be managed. Another advantage of the 2SC3225,T6ALPSF(M) is its compatibility with other electronic components, which means it can be used to build highly efficient electronic circuits.
When it comes to the operation of the 2SC3225,T6ALPSF(M) transistor, the key characteristic is its on-state voltage, which is the voltage required to turn the transistor from an off-state to an on-state. The voltage is typically between 0.7V and 1.8V. The other important characteristic is the power dissipation capability, which is the maximum amount of power the transistor can handle without experiencing thermal runaway. The 2SC3225,T6ALPSF(M) transistor is capable of handling up to 1W of power, making it suitable for many power switching and amplifier applications.
The 2SC3225,T6ALPSF(M) transistor is a versatile and reliable transistor, suitable for a wide range of applications. As a low power amplifier, it can provide low power audio amplification while as a power switching transistor it can efficiently switch high-power loads. Additionally, due to its low voltage threshold, it is suitable for use in temperature regulated circuits and provides an efficienct means of dissipating heat.
The specific data is subject to PDF, and the above content is for reference
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