2SC39310CL

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The 2SC39310CL is a silicon NPN epitaxial planar transistor manufactured by Toshiba. It is suitable for high frequency power amplification in cellular phones and other applications operating at frequencies from 500 MHz to 3 GHz.

The 2SC39310CL is intended for a wide range of applications, including power amplifiers, pre-amplifiers, oscillators, and mixer circuits. It has a low noise figure, a large gain-bandwidth product, and a wide dynamic range. Additionally, it offers excellent AF linearity, RF linearity, high gain, and sound frequency characteristics.

The 2SC39310CL has a NPN bipolar structure. It consists of two internally connected layers of doped silicon, known as the base and the emitter. The base region is the main controlling element, while the emitter is used to inject electrons into the base region. The collector is connected to the external circuit to collect the flowing electrons. It is important to note that the base-emitter junction is forward-biased, while the collector-base junction is reversed-biased.

The 2SC39310CL is capable of handling a maximum collector current of 4A, a maximum collector power dissipation of 100Watts, and a maximum collector-base voltage of 30V. It has a hFE of 35 to 200 at 2mA and a hFE of 20 to 60 at 16mA. The maximum frequency and voltage of the 2SC39310CL is 3GHz and 50V, respectively.

The working principle of the 2SC39310CL is divided into two zones: the forward-bias region and the reverse-bias region. In the reverse-bias region, the base-emitter junction is reverse-biased and the collector-base junction is forward-biased. In this region, a small current flows due to the reversed bias voltage. The collector current is proportional to the base-emitter voltage and is also inversely proportional to the collector-base voltage. In the forward-bias region, the base-emitter junction is forward-biased and the collector-base junction is reversed-biased. The collector current increases exponentially with increasing base-emitter voltage while it is inversely proportional to the collector-base voltage.

The 2SC39310CL is an efficient RF transistor suitable for a wide range of applications. It has a low noise figure and high gain-bandwidth product. It offers excellent AF, RF, and sound frequency characteristics. Additionally, it is capable of handling a maximum collector current of 4A, a maximum collector power dissipation of 100Watts, and a maximum collector-base voltage of 30V. This makes it a great choice for high frequency power amplifiers, pre-amplifiers, oscillators and mixer circuits.

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