Allicdata Part #: | 2SC3646S-P-TD-E-ND |
Manufacturer Part#: |
2SC3646S-P-TD-E |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 100V 1A |
More Detail: | Bipolar (BJT) Transistor NPN 100V 1A 120MHz 500mW ... |
DataSheet: | 2SC3646S-P-TD-E Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.17993 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 40mA, 400mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 140 @ 100mA, 5V |
Power - Max: | 500mW |
Frequency - Transition: | 120MHz |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | PCP |
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The 2SC3646S-P-TD-E is an NPN straight epitaxial plastic-encapsulated bipolar transistor from Panasonic. It is predominately used in applications ranging from radio frequency amplifiers, oscillator circuits, charger circuits, and more. The 2SC3646S-P-TD-E features a high DC current gain, fast switching performance, and low noise characteristics, making it a great option for digital and analog applications. In order to understand how this bipolar transistor works, it is important to understand its structure and basics of operation.
The 2SC3646S-P-TD-E is composed of two distinct structures - the base and Collector structures. The Base structure is composed of two layers of N-type semiconductor material and is capable of conducting current. The Collector structure is composed of two layers of P-type semiconductor material, which serves to hold the charge necessary for the base current to pass through. When a small base current is applied, it causes the transistor to switch on and the collector current passes through the Collector structure.
The 2SC3646S-P-TD-E is considered an NPN transistor as it consists of one N-type semiconductor layer and two P-type layers. This is in contrast to a PNP transistor which is composed of two N-type layers and one P-type layer. NPN transistors are generally more common as they are less expensive to manufacture and are easier to get the required current flows. The symbol for an NPN transistor is shown in the image below.
The principle of operation of an NPN transistor is based on the fact that electrons can freely move between the N-type and P-type layer. When a small current is applied to the Base layer, the electrons are forced to move from the N-type layer to the P-type layer and form a narrow depletion layer at the junction, thus allowing current to pass from the Collector to the Emitter. The transistor will remain “on” until the Base current is removed and the electrons return to the N-type layer, blocking the current path and turning the transistor “off”. This is the basis of how an NPN transistor works.
The 2SC3646S-P-TD-E is designed for use with low to medium power and features a maximum collector current of 0.2A, a collector to base voltage of 400V, and a collector to emitter voltage of 800V. The device also features high frequency operation capabilities and is capable of switching frequencies up to 300kHz. It has a high DC current gain of 400 and a low noise figure of -40 dB. The device is also capable of providing stable, low on-state resistance as well as low power consumption, making it a great option for all types of low to medium power applications.
In conclusion, the 2SC3646S-P-TD-E is an excellent choice for a range of digital and analog operations. It is capable of providing high current gain, fast switching performance, and low noise characteristics. The device is perfect for applications such as radio-frequency amplifiers, oscillator circuits, charger circuits, and more. It is also relatively low-cost, making it an attractive option for many engineers. With its excellent performance characteristics, the 2SC3646S-P-TD-E is definitely a great choice for a range of applications.
The specific data is subject to PDF, and the above content is for reference
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