Allicdata Part #: | 2SD1207T-ND |
Manufacturer Part#: |
2SD1207T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 50V 2A MP |
More Detail: | Bipolar (BJT) Transistor NPN 50V 2A 150MHz 1W Thro... |
DataSheet: | 2SD1207T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 50mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 100mA, 2V |
Power - Max: | 1W |
Frequency - Transition: | 150MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | 3-MP |
Base Part Number: | 2SD1207 |
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```html2SD1207T application field and working principle
The 2SD1207T is a NPN silicon-epitaxial transistor categorized under the Transistors - Bipolar (BJT) - Single category. It is mainly used in audio frequency driver stages, which requires minimum distortion, low noise and wide band response as well as in switching applications.
2SD1207T Features and Characteristics
- High DC current gain (hFE ≥ 100)
- Low collector-emitter saturation voltage (VCES = 0.25V)
- High frequency (fT ≥ 1.0MHz).
2SD1207T Working Principle
2SD1207T uses the principle of a bipolar transistor, in which current passes from one side of the NPN transistor (collector) to other (emitter). The current is controlled by the base current, which regulates the flow of the current between the collector and the emitter. For example, when a small amount of current is passed through the base then, the current will be increased between the collector and the emitter. However, when the base current is withdrawn, then the current between the collector and the emitter will be reduced. This is how the 2SD1207T transistors work.
2SD1207T Applications
The 2SD1207T transistor can be used in a wide range of applications, such as audio frequency driver stages, audio amplifiers, switches, remote controls, power supplies, and other related applications. For example, in audio frequency driver stages, this transistor can be used as a voltage amplifier that boosts the input signal to create higher-amplitude output. It is also used in audio amplifiers for low-noise and high-bandwidth amplifications. Furthermore, it is also utilized in high-current applications, such as electric motors, solenoids, and relays since it can dissipate up to 1 watt of power without getting damaged.
2SD1207T Advantages
- Takes less power to operate
- Operates at wider range of frequencies
- Robust and reliable construction
- High current gain (hFE ≥ 100 )
- Reducing switching time
2SD1207T Disadvantages
- Not suitable for high voltage applications
- Can be lost by milling effect
- Increases noise due to switching activity
Conclusion
2SD1207T is a NPN silicon-epitaxial transistor that belongs to the Transistors - Bipolar (BJT) - Single category. Its main use is in audio frequency driver stages, which requires minimum distortion and low noise along with wide band response. It is also utilized in a variety of other power applications such as power supplies, switching circuits, audio amplifiers and electric motors. It has a number of advantages such as high current gain, reducing switching time and operating at wider range of frequencies. Some of its disadvantages include not suitable for high voltage applications and increaes noise due to switching activity.
```The specific data is subject to PDF, and the above content is for reference
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