| Allicdata Part #: | 2SD1766T100P-ND |
| Manufacturer Part#: |
2SD1766T100P |
| Price: | $ 0.15 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | TRANS NPN 32V 2A SOT-89 |
| More Detail: | Bipolar (BJT) Transistor NPN 32V 2A 100MHz 2W Surf... |
| DataSheet: | 2SD1766T100P Datasheet/PDF |
| Quantity: | 1000 |
| 1000 +: | $ 0.13832 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Not For New Designs |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 2A |
| Voltage - Collector Emitter Breakdown (Max): | 32V |
| Vce Saturation (Max) @ Ib, Ic: | 800mV @ 200mA, 2A |
| Current - Collector Cutoff (Max): | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 82 @ 500mA, 3V |
| Power - Max: | 2W |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-243AA |
| Supplier Device Package: | MPT3 |
| Base Part Number: | 2SD1766 |
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The 2SD1766T100P is a single bipolar junction transistor (BJT) that is part of the 2SD1766T series of BJT’s. It is a small signal, NPN, low-power transistor developed by Renesas that is rated at 100 milliwatts. The features of this BJT include low noise, high gain, and low power consumption.
The 2SD1766T100P has a wide range of applications. It can be used in amplifiers, automatic gain control, chopper circuits, and pulse width modulation. It is designed to provide low-power operation, switch circuits, and signal amplification with its NPN bipolar configuration. This device can also be used for signal conditioning, signal conversion, and signal timing.
In terms of its working principle, the 2SD1766T100P operates via a PN junction between the base and collector of the transistor. It relies on a voltage signal applied to the base to control the current that flows through it. When a positive signal is applied, this increases the current between the emitter and collector, resulting in a signal gain. Similarly, when the emitter signal is switched off, the transistor switches off, reducing current and preventing any further signal gain.
When operating in switch mode, the 2SD1766T100P is able to provide fast switching speeds of up to 1 microsecond. It can also provide a fast turn-off time with a low capacitive loading, allowing it to be used in high-speed switching applications such as motor control, switching power supplies, and high power RF circuits. It also features a high breakdown voltage of up to 200 volts.
The 2SD1766T100P also has a wide range of temperature ranges, making it suitable for operation in both extreme cold and hot temperatures. It is also highly stable, with no need for external temperature compensation or stabilization circuitry. Additionally, it has a built-in temperature protection system that helps to protect against thermal runaway.
In general, the 2SD1766T100P is a powerful and reliable BJT that is suited for a wide range of applications. Its low power consumption, fast switching speeds, and high breakdown voltage make it an excellent choice for a variety of signal amplification, signal conditioning, and signal conversion applications. Additionally, its wide temperature range, stability, and built-in thermal protection make it a safe and reliable component, ensuring it performs well regardless of the external environment.
The specific data is subject to PDF, and the above content is for reference
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2SD1766T100P Datasheet/PDF