2SD16400R

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 1mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	8000 @ 1A, 10V
Power - Max:	1.2W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126B-A1

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<p>The 2SD16400R is an NPN Silicon Transistor designed for general purpose switching and amplifier applications. It is a bipolar junction transistor (BJT) single type which has a relatively high collector current gain, decent frequency response and an acceptably low noise figure. It is a medium power device with a maximum collector power rating of 500 mW, a maximum collector current rating of 1.5A and a maximum collector-emitter voltage rating of 45V. It has an incremental current gain of 1.5-20 and a collector-emitter saturation voltage of 1.2V.</p><p>The device is typically used in various amplifier circuits and is also suitable for use in a wide variety of switching applications. The most common applications include motor controls, servo circuits, and audio/video amplifiers. The 2SD16400R is suitable for use in high-frequency switching circuits up to 5kHz and amplifiers up to 20MHz.</p><p>The device has a Common Emitter configuration and consists of an N-type base material, an N-type emitter and a P-type collector. When a suitable voltage is applied to the transistor, it undergoes a process called \'base current control\' where a small current from the base terminal to the collector will cause a larger current from the emitter to the collector. This larger current, called the \'collector current\', is proportional to the applied base current. This is known as the Transistor Action and is the basic principle of operation of the transistor.</p><p>In addition to its switching and amplifying characteristics, the 2SD16400R also features an undetectable noise figure that is suitable for use in audio circuits. It has a storage temperature range of -65°C to 175°C and an operating temperature range of -40°C to 125°C. The device is available in a TO-220 package with a lead length of 2.8mm and a pin configuration of 1-Collector, 2-Base, 3-Emitter.</p><p>In conclusion, the 2SD16400R is an excellent general-purpose NPN Silicon Transistor suitable for switching and amplifying applications in a wide variety of circuits. Its features include an incremental current gain of 1.5-20, a collector-emitter saturation voltage of 1.2V and an undetectable noise figure. It is available in a TO-220 package with a lead length of 2.8mm and a pin configuration of 1-Collector, 2-Base, 3-Emitter.</p>

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