
Allicdata Part #: | 2SD1803S-EOS-ND |
Manufacturer Part#: |
2SD1803S-E |
Price: | $ 0.65 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 50V 5A TP |
More Detail: | Bipolar (BJT) Transistor NPN 50V 5A 180MHz 1W Thro... |
DataSheet: | ![]() |
Quantity: | 1995 |
1 +: | $ 0.59220 |
10 +: | $ 0.52668 |
100 +: | $ 0.41082 |
500 +: | $ 0.33936 |
1000 +: | $ 0.26791 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 150mA, 3A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 140 @ 500mA, 2V |
Power - Max: | 1W |
Frequency - Transition: | 180MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TP |
Base Part Number: | 2SD1803 |
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The 2SD1803S-E is a single bipolar junction transistor (BJT) belonging to the 2SD family, manufactured by NEC Electronics. This semiconductor device is a component that controls the signal current by creating an active region between the collector and emitter electrodes. It can also be used as a switch, amplifying signal through the base electrode.
This device offers both high current gain and low voltage gain, making it one of the most suitable components for many electronic projects. It also provides good protection from thermal and electrical shock, making it ideal for applications wherein high accuracy and reliability is required.
2SD1803S-E Application Fields
The 2SD1803S-E is widely used in consumer electronics such as cell phones, portable media players, gaming systems, and audio equipment. This device can also be found in heating and cooling systems, lighting systems, and home appliances. It can be used to regulate power flow and current, such as in low-level audio and video circuits. Other applications include providing signals to input/output ports and providing switch circuits.
2SD1803S-E Working Principle
The working principle of the 2SD1803S-E is based on the base-collector or emitter-collector sandwich structure. The base-collector junction consists of two diodes, one N-type and one P-type, with a connecting material between the junctions. When a voltage is applied to the base, a current starts to flow in the junction due to P-N junction characteristics. Then, current flows from the collector to the emitter, depending upon the base current.
When the output is higher than the input, that is an amplification operation. Also known as an active gain, the output is controlled by a transistor. In this working principle, the collector current is proportional to the base current and therefore, the gain of the transistor is adjustable.
This device provides a range of features, making it very suitable for a variety of different applications, including audio/video systems and other consumer electronics. It provides a range of protection features, making it highly reliable and suitable for projects where accuracy and reliability is required. The 2SD1803S-E is a valuable tool in the world of semiconductors.
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