2SD1803S-E Allicdata Electronics
Allicdata Part #:

2SD1803S-EOS-ND

Manufacturer Part#:

2SD1803S-E

Price: $ 0.65
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 50V 5A TP
More Detail: Bipolar (BJT) Transistor NPN 50V 5A 180MHz 1W Thro...
DataSheet: 2SD1803S-E datasheet2SD1803S-E Datasheet/PDF
Quantity: 1995
1 +: $ 0.59220
10 +: $ 0.52668
100 +: $ 0.41082
500 +: $ 0.33936
1000 +: $ 0.26791
Stock 1995Can Ship Immediately
$ 0.65
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TP
Base Part Number: 2SD1803
Description

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The 2SD1803S-E is a single bipolar junction transistor (BJT) belonging to the 2SD family, manufactured by NEC Electronics. This semiconductor device is a component that controls the signal current by creating an active region between the collector and emitter electrodes. It can also be used as a switch, amplifying signal through the base electrode.

This device offers both high current gain and low voltage gain, making it one of the most suitable components for many electronic projects. It also provides good protection from thermal and electrical shock, making it ideal for applications wherein high accuracy and reliability is required.

2SD1803S-E Application Fields

The 2SD1803S-E is widely used in consumer electronics such as cell phones, portable media players, gaming systems, and audio equipment. This device can also be found in heating and cooling systems, lighting systems, and home appliances. It can be used to regulate power flow and current, such as in low-level audio and video circuits. Other applications include providing signals to input/output ports and providing switch circuits.

2SD1803S-E Working Principle

The working principle of the 2SD1803S-E is based on the base-collector or emitter-collector sandwich structure. The base-collector junction consists of two diodes, one N-type and one P-type, with a connecting material between the junctions. When a voltage is applied to the base, a current starts to flow in the junction due to P-N junction characteristics. Then, current flows from the collector to the emitter, depending upon the base current.

When the output is higher than the input, that is an amplification operation. Also known as an active gain, the output is controlled by a transistor. In this working principle, the collector current is proportional to the base current and therefore, the gain of the transistor is adjustable.

This device provides a range of features, making it very suitable for a variety of different applications, including audio/video systems and other consumer electronics. It provides a range of protection features, making it highly reliable and suitable for projects where accuracy and reliability is required. The 2SD1803S-E is a valuable tool in the world of semiconductors.

The specific data is subject to PDF, and the above content is for reference

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