2SD1484KT146Q

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 15mA, 150mA
Current - Collector Cutoff (Max):	500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 10mA, 3V
Power - Max:	200mW
Frequency - Transition:	250MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SMT3
Base Part Number:	2SD1484

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Introduction

The 2SD1484KT146Q is an NPN transistor designed for use in various applications where reliable performance is required. It is part of the Transistors - Bipolar (BJT) - Single family and thus is useful for a variety of amplifying and switching applications. This article will describe the features, application fields, and working principles of the 2SD1484KT146Q.

Features

The 2SD1484KT146Q is a high-performance NPN transistor featuring high voltage and large current capacity, suitable for a wide range of applications. It is capable of operating at temperatures up to 150℃ and is precision machined to ensure a low-noise operation. The transistor features a TO-126 package, which provides a high level of thermal stability and excellent high frequency performance. The 2SD1484KT146Q has a high gain of hFE = 240-480 and is rated for 40V Vce, 0.4A Ic, and 10W power dissipation.

Application Fields

The 2SD1484KT146Q is designed for a variety of applications where reliable performance is required. It is commonly used for audio power amplifiers, long-distance telecom transmissions, relay drivers, horizontal deflection circuits in TVs, and as a switching device in LCD and LED displays. It can also be used in high-frequency inverter circuits, voltage regulators, and general-purpose switching.

Working Principle

The 2SD1484KT146Q is an NPN transistor, consisting of two P-type semiconductor layers between two N-type semiconductor layers. When connected to a power source, the N-type layers will become negatively charged and the P-type layers will become positively charged. The charge carriers are injected into the P-type layers, allowing an electric current to flow between the base and collector terminals. This current also causes current to flow between the emitter and collector terminals, creating an amplified output signal. In summary, the 2SD1484KT146Q works by amplifying the input current, which is used to drive various switching and amplifying applications.

Conclusion

In conclusion, the 2SD1484KT146Q is an NPN transistor designed for a wide range of reliable applications. It features a high voltage, high current, and high power dissipation, with excellent thermal stability. It has a TO-126 package, suitable for a variety of audio, telecom, and display applications. The working principle of the transistor relies on charge injection, causing current to flow between the base and collector, and emitter and collector terminals, resulting in an amplified output signal.

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