2SD12680P Allicdata Electronics
Allicdata Part #:

2SD12680P-ND

Manufacturer Part#:

2SD12680P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN 80V 3A TO-220F
More Detail: Bipolar (BJT) Transistor NPN 80V 3A 30MHz 2W Throu...
DataSheet: 2SD12680P datasheet2SD12680P Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 500mA, 2V
Power - Max: 2W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F-A1
Description

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The 2SD12680P bipolar junction transistor is a single device,and it is one of the most commonly used types of semiconductors. This type of transistor is classified under transistors - bipolar (BJT) - single. A bipolar junction transistor (BJT) is a type of transistor that utilizes both electron and hole charge carriers and is used for amplification and switching applications.

The 2SD12680P can be used in a wide range of applications from low power amplifiers to high power switchers. It features high breakdown voltage and high operating temperature and can operate up to 250℃. This type of transistor is also used in heavy-duty and high power systems, primarily in switching and switching regulator applications. It is designed for use in a wide range of applications, including switching power supplies, home appliances, automotive electronics, and industrial applications.

The 2SD12680P is designed with a structure that employs the use of two p-type material regions, the emitter and the collector, connected to the n-type base region. The base is the controlling element and carries the input signal. When a current is applied to the base, electrons from the base are drawn to the collector, allowing current to pass from the collector to the emitter. The collector-emitter voltage then increases as a result, resulting in amplified current gain.

The collector-emitter current gain, primarily known as beta, is designed to be low, usually in the range of 10 to 100, however it can go higher depending on the device type. The gain of the 2SD12680P is determined by the charge carriers available in each region, or junction. The number of electrons available in the base region is determined by the input current, while the amount of charge carriers in the collector and emitter region is determined by the applied voltage, enabling the BJT to achieve higher gains.

The 2SD12680P can be operated in both modes, being the active and the saturation mode. In the active mode, the transistor is able to amplify signals and the output current is proportional to the input current. In the saturation mode, the transistor is able to switch heavy current loads as the transistor acts as an on/off switch. When the output current reaches a certain level, the transistor saturates.

Overall, the 2SD12680P is one of the most commonly used transistors in the market and it is designed for wide range of applications due to its versatile structure and characteristics. The 2SD12680P employs simple Physics principles such as field effect, electron flow, and current gain principle, to deliver reliable and efficient performance. This device also features a high breakdown voltage and high operating temperature, making it suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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