2SD12110R Allicdata Electronics
Allicdata Part #:

2SD12110R-ND

Manufacturer Part#:

2SD12110R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN 120V 0.5A TO-92L
More Detail: Bipolar (BJT) Transistor NPN 120V 500mA 200MHz 1W ...
DataSheet: 2SD12110R datasheet2SD12110R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 30mA, 300mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 150mA, 10V
Power - Max: 1W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92L-A1
Description

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The 2SD12110R is a NPN bipolar junction transistor (BJT) that is used mainly for power amplifiers. It is also commonly known as the Darlington transistor, named after John Bardeen and Walter Brattain, two scientists who were key to the invention of the BJT in 1947. This type of transistor has two leads – one connected to the base and the other connected to the collector.The 2SD12110R has a maximum current gain of 150, making it ideal for use in high-power applications. It is suitable for use as a low-noise audio amplifier or as an output stage of a power amplifier. As it is made from an epitaxial layer, this type of transistor has excellent thermal conductivity, meaning it is also quite efficient and reliable.In terms of its power application, the 2SD12110R has an average collector current of 5.5 Amps. This makes it ideal for use in high-power applications such as amplifier circuits and switch-mode power supplies. It also has a maximum collector-emitter voltage of 80V and a minimum emitter-base voltage of 8V, meaning that this transistor can handle a wide range of input voltages.When it comes to the working principle of the 2SD12110R, it is based on two aspects – the bipolar current flow and the resistive current flow. The bipolar current flow can be explained as a flow of electrons from the collector to the emitter, and this flow is controlled by the amount of current present in the base. The resistive current flow is an important factor in the power amplification process, and it works similarly to the way resistors work – by reducing the current flow.The 2SD12110R, therefore, can be used in a variety of applications thanks to its ability to provide power amplification with both bipolar and resistive current flows. Its high current gain and low noise level make it particularly suitable for use in audio amplifiers, where it can provide the power necessary for the speakers to accurately reproduce sound. It is also commonly used in switch-mode power supplies, where its high current gain and low noise level make it an ideal choice for powering small electrical devices.In conclusion, the 2SD12110R is a versatile and reliable NPN bipolar junction transistor. Thanks to its high current gain and low noise level, it is suitable for use in both high-power and low-power applications. It can provide the necessary current and voltage to supply powering a range of electrical equipment. As it is made from an epitaxial layer, this type of transistor is also quite reliable, making it a good choice for use in power amplifiers, audio amplifiers, and switch-mode power supplies.

The specific data is subject to PDF, and the above content is for reference

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