2SD1271AP Allicdata Electronics
Allicdata Part #:

2SD1271AP-ND

Manufacturer Part#:

2SD1271AP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN 100V 7A TO-220F
More Detail: Bipolar (BJT) Transistor NPN 100V 7A 30MHz 2W Thro...
DataSheet: 2SD1271AP datasheet2SD1271AP Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 7A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 250mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 3A, 2V
Power - Max: 2W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F-A1
Description

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The 2SD1271AP is a single bipolar junction transistor (BJT) that is commonly used in the automotive and industrial fields. It is an NPN transistor and has an emitter-collector breakdown voltage rating of 60V. The 2SD1271AP is designed for use in power switching applications and is great for load switching and interfacing between high power circuits and low power circuits.

The 2SD1271AP uses a current amplified, high performance transistor structure. This makes it very suitable for high frequency switching applications. It also has a very low collector-emitter saturation voltage, which helps to reduce power loss when operating in current-switching applications.

The 2SD1271AP has a collector-base breakdown voltage of 60V and can withstand up to 150A of collector current. The maximum power dissipation of the 2SD1271AP is 3W and the maximum collector-emitter voltage is 50V. This makes it ideal for use in applications that require high voltage and current levels.

The 2SD1271AP can be used in a variety of circuit applications, such as amplifier circuits, switching power supplies, and MOSFET drivers. It can also be used in high frequency switching circuits and signal conditioning circuits. In addition, the 2SD1271AP can be used in automotive and industrial applications, such as automotive starters and solenoid valves.

The working principle of a bipolar transistor is based on the principle of a vacuum tube. A voltage applied to the base-emitter junction causes a current to flow between the collector and the emitter. The current flow is amplified by the collector, which is why it is effective for switching applications. The current flowing through the connection between the collector and the emitter is known as the collector current.

The current gain of the 2SD1271AP is dependent on the size of the base, the size of the collector, and the type of material used for the base and collector materials. It is also dependent on the applied voltage and the temperature of the surrounding environment. The 2SD1271AP has a low power loss and a high voltage and current rating, making it a suitable choice for many applications.

Overall, the 2SD1271AP is a high performance BJT available, with a wide variety of applications. Its high voltage and current ratings make it a suitable choice for many power and signal switching applications. It has a low collector-emitter saturation voltage and a high current gain. Additionally, it has a high operating temperature range, making it suitable for temperature-sensitive applications. Overall, the 2SD1271AP is an excellent choice for many automotive and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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