Allicdata Part #: | 2SD1275AP-ND |
Manufacturer Part#: |
2SD1275AP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN DARL 80V 2A TO-220F |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 80V 2A 2... |
DataSheet: | 2SD1275AP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 8mA, 2A |
Current - Collector Cutoff (Max): | 2mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 4000 @ 2A, 4V |
Power - Max: | 2W |
Frequency - Transition: | 20MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F-A1 |
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Transistors are among the most-used electronic components nowadays. Their applications range from signal amplification to signal switching. One of the most commonly used and versatile type of transistors is the bipolar junction transistor (BJT). Due to its adjustable current gain and relatively low speed, it is ideal for a variety of analog applications including signal amplification and signal switching.
The 2SD1275AP is a single-bipolar transistor designed for signal amplification and signal switching applications. It has a maximum current of 5A and a maximum voltage of 200V. Its gain is rated up to 120. It is also noted for its low distortion, low power consumption, and high maximum frequency.
This 2SD1275AP is a N-channel device, meaning it is designed to work as a source of electrons.
The working principle of the 2SD1275AP is fairly simple. It consists of three terminals, the collector, base, and emitter. The Collector is the terminal with the highest electric potential and is the output of the transistor. The Base is the control terminal with the intermediate potential and is the input of the transistor. The Emitter is the terminal with the lowest electric potential and is the reference of the transistor. When a current is applied to the base, the voltage potential drop causes electrons to be drawn between the emitter and collector, allowing current to flow.
The 2SD1275AP can be used for a variety of different purposes. It can be used in radio frequency amplifiers, high-frequency switch circuits, power amplifiers, oscillators, and more. It is also commonly used in audio amplifier stages and digital circuits.
The 2SD1275AP is a versatile, high-performance bipolar junction transistor. Its high gain and low distortion make it a great choice for a wide range of analog and digital applications. It also offers a low power consumption and a high maximum frequency, making it ideal for high-frequency switching and signal amplification. Its versatile design and wide range of applications make it popular with engineers and hobbyists alike, and its low cost and wide availability make it an even more attractive option.
The specific data is subject to PDF, and the above content is for reference
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