2SD1628F-TD-E Allicdata Electronics
Allicdata Part #:

2SD1628F-TD-E-ND

Manufacturer Part#:

2SD1628F-TD-E

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 20V 5A PCP
More Detail: Bipolar (BJT) Transistor NPN 20V 5A 120MHz 500mW S...
DataSheet: 2SD1628F-TD-E datasheet2SD1628F-TD-E Datasheet/PDF
Quantity: 1000
1 +: $ 0.12800
10 +: $ 0.12416
100 +: $ 0.12160
1000 +: $ 0.11904
10000 +: $ 0.11520
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Power - Max: 500mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP
Description

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The 2SD1628F-TD-E is a NPN silicon transistor that has a variety of commercial and industrial applications. It is able to handle a power of up to 600 volts and a collector-emitter current of 1.8 A. The 2SD1628F-TD-E is classified as a single bipolar junction transistor (BJT).

A BJT is a three terminal device, commonly used in electronic amplifiers, power supplies, and industrial systems. It has been in existence since the early stages of electronic development, and isconsidered a reliable, popular and inexpensive form of transistor available today. It is based on the combination of two back-to-back diodes, creating a “junction”, hence the name junction transistor.

The collector-base junction, one of the two back-to-back diodes, is reverse biased while the emitter-base junction is forward biased. Due to the forward bias, current flows into the base, enabling a current gain that is determined by the current amplification factor (beta). The beta of the 2SD1628F-TD-E is 330, making this an excellent choice for digital and analog amplifiers. The forward voltage drop across the collector-emitter junction of 0.6 V also enables this transistor to operate in switching circuits.

When compared to other types of transistors, the BJT is distinguished from other types by its ability to control larger amounts of power, as well as its versatility. It is able to handle higher voltages and larger currents, making it useful for many types of power control applications. The 2SD1628F-TD-E is an ideal choice for DC-to-DC converters, motor control systems, AC power relays, and high voltage switching applications.

In addition to its wide range of industrial applications, the 2SD1628F-TD-E has found its way into the world of recreational projects and amateur electronics. Hobbyists often use this type of transistor when constructing basic circuits, amplifiers, and other projects requiring a reliable power device. It is also commonly found in 555 Timer ICs and other mixed-signal circuits.

While the 2SD1628F-TD-E is a single transistor, it is a significant building block for more complex circuit designs. From power supplies and amplifiers to motor control systems and general circuit building blocks, this versatile, powerful, and reliable device is an excellent fit for virtually any commercial and industrial application.

The specific data is subject to PDF, and the above content is for reference

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