2SD1683S

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	4A
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 100mA, 2A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 100mA, 2V
Power - Max:	1.5W
Frequency - Transition:	150MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126ML

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2SD1683S Application Field and Working Principle

Transistors are electronic circuits used to amplify and switch electronic signals. They are classified by type of current used to control the signal and whether it is a linear or switching circuit. Bipolar Transistors, also known as BJTs, are those that use both negative and positive voltage for control. The 2SD1683S is an NPN type BJT manufactured by Toshiba that is used in several different applications.The 2SD1683S is a standard small-signal NPN transistor suitable for use in small power linear applications. It is best used for low-voltage, low-power circuitry and provides low current amplification and switching control for low power devices. Applications for the 2SD1683S include voltage stabilization, interface circuit applications, motor drive circuits, and a host of other applications requiring low power amplification and switching.The 2SD1683S transistor is composed of three terminals and is manufactured using silicon and has a maximum collector current of 4A and a maximum collector-emitter voltage (VCEO) of 60V. The collector-base voltage can reach 150V at 5A, while the emitter-base voltage can reach 6V at 5A. The 2SD1683S is also capable of operating in temperatures ranging from -25 to 150 degrees Celsius.The 2SD1683S operates according to the Transistor Amplification Principle, which states that current is controlled by voltage. The base terminal of a NPN transistor functions as the controlling gate and regulates the amount of current flowing from collector to the emitter, allowing current to be amplified between the terminals. By controlling the applied voltage at the base terminal, the collector current can be regulated, allowing for switching and other amplification functions.The 2SD1683S is designed to operate with an input current at the base terminal in the range of 0.2A to 4A. The output current at the emitter is typically proportional to the base current and operates at a maximum of 4A when the base terminal is supplied with the maximum of 4A.As the transistor is a voltage-controlled device, the voltage applied at the base terminal must be regulated carefully. Too little voltage will prevent the transistor from amplifying and switching, while too much voltage can damage it. The 2SD1683S has a very low threshold voltage, however, and can operate efficiently with a small applied voltage, making it suitable for low power applications.In conclusion, the 2SD1683S is a small-signal NPN transistor suitable for low power linear and switching applications. With a maximum collector current of 4A and a maximum collector-emitter voltage of 60V, the 2SD1683S provides an efficient means of controlling current and regulating voltage. Its low threshold voltage allows the transistor to operate efficiently even at low power levels, making it suitable for a range of different applications.

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