2SD1802T-E

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	5A
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	0.5mV @ 100mA, 2A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 100mA, 2V
Power - Max:	1W
Frequency - Transition:	150MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	TP
Base Part Number:	2SD1802

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2SD1802T-E Application Field and Working PrincipleThe 2SD1802T-E is a general-purpose single NPN switching transistor capable of high frequency amplification and switching applications. It is designed for use in various line-operated power supplies, such as TV receivers, computers, and audio equipment. This type of transistor is available in small-signal and low-frequency amplifiers, as well as in other power control circuits.The 2SD1802T-E offers a wide range of features and capabilities, including low-frequency switching, high-voltage switching, high-temperature operation, low noise operation, high speed operation, and good current gain performance. It also provides good noise immunity and excellent linearity over a wide temperature range.In order to understand how this transistor works and its application field, it is important to gain a general understanding of how transistors work. In general, transistors are electronic devices that amplify electrical signals and are used for various applications including switching, amplification, and power control. A transistor consists of three main components: a base, an emitter, and a collector. The base is the control terminal of the transistor and is the key element in controlling the amount of current that is flowing through the device. The emitter is the source of electrons for the collector, and the collector is the device which receives electrons from the emitter in order to complete the current flow. The working principle of the 2SD1802T-E is based on the principle of controlling the current flow through the transistor. When a base voltage is applied, electrons are drawn away from the emitter, thus reducing the current flowing through the device. When the base voltage is increased, the resulting current increase will require additional electrons to be sourced from the emitter. In this way the current flow through the device can be controlled.The 2SD1802T-E is ideal for use in high-frequency applications, such as TV and computer power supplies, as well as in low-frequency switching and signal amplifiers. It can operate at high temperatures, providing good linearity over a wide temperature range. Its high stability and low noise performance make it a good choice for use in a variety of power control and signal amplification applications.In conclusion, the 2SD1802T-E is a general-purpose single NPN switching transistor designed for use in various line-operated power supplies. It offers a wide range of features and capabilities, including low-frequency switching, high-voltage switching, high-temperature operation, low-noise operation, high speed operation, and good current gain performance. It is an ideal choice for high-frequency applications, low-frequency switching and amplifying signals, as well as power control circuits.

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