2SD1816S-E Allicdata Electronics
Allicdata Part #:

2SD1816S-E-ND

Manufacturer Part#:

2SD1816S-E

Price: $ 0.64
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 100V 4A TP
More Detail: Bipolar (BJT) Transistor NPN 100V 4A 180MHz 1W Thr...
DataSheet: 2SD1816S-E datasheet2SD1816S-E Datasheet/PDF
Quantity: 1000
1 +: $ 0.57960
10 +: $ 0.51219
100 +: $ 0.39281
500 +: $ 0.31051
1000 +: $ 0.24841
Stock 1000Can Ship Immediately
$ 0.64
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 5V
Power - Max: 1W
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TP
Base Part Number: 2SD1816
Description

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The 2SD1816S-E is a small-signal NPN transistor with high speed switching performance, making it a suitable choice for numerous industrial and consumer goods applications. The transistor has a large current gain with a maximum current of 200 mA. It is a Bipolar Junction Transistor (BJT) with oxide passivation, which provides high-level operation stability and low-power consumption. The device is also designed with a low-power standby mode, allowing for a greater level of energy efficiency.

The 2SD1816S-E has a very wide range of applications, including motor control circuits, semiconductor relays, low-frequency amplifiers, inverters, oscillators, power transistors, and various switching circuits. The device features superior surge and temperature resistance, making it suitable for use in extreme conditions, such as those found in automotive and 48V telecom applications. Additionally, its low-power standby mode allows it to be used in applications which require low-power operation.

The 2SD1816S-E is a bipolar NPN transistor, meaning it can be used in both switching and amplifying circuits. It works by utilizing the exchange of charge carriers (electrons and holes) to control current flow between the base and collector terminals. When there is an appropriate current and voltage difference between these two terminals, electrons will be drawn from the base into the collector, creating a controlling current. This current can then be used to power a range of devices and components.

In operation, the base of the 2SD1816S-E is controlled by the input voltage, which acts as a “turn on” switch for the device. When the voltage is a positive value, electrons from the base are drawn into the collector, creating a current and turning the device on. When the voltage is negative, electrons are repelled away from the collector, preventing the current and turning the device off. Additionally, by altering the input voltage, it can be used to control the amplitude and frequency of the current.

Due to its superior speed, temperature, and surge resistance, the 2SD1816S-E is suitable for numerous applications which require a reliable, high-performing transistor. Its low-power standby mode makes it suited to applications which require energy efficiency, while its ability to control current makes it suitable for use in a range of consumer and industrial goods. As such, the 2SD1816S-E provides a versatile and reliable solution for a variety of consumer and industrial goods applications.

The specific data is subject to PDF, and the above content is for reference

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