Allicdata Part #: | 2SD1835T-ND |
Manufacturer Part#: |
2SD1835T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 50V 2A NP |
More Detail: | Bipolar (BJT) Transistor NPN 50V 2A 150MHz 750mW T... |
DataSheet: | 2SD1835T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 50mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 100mA, 2V |
Power - Max: | 750mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | 3-NP |
Base Part Number: | 2SD1835 |
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.The 2SD1835T is a silicon NPN transistor(Bipolar Junction Transistor; BJT) for general purposes and is commonly used for audio amplifiers. It can cater to all medium power small signal, amplifier and switching applications. Manufactured by multiple semiconductor giants, it is considered a reliable, robust and general-purpose transistor.
A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of three or more layers called regions; the base, the emitter and the collector regions. It is basically a solid-state semiconductor device with three terminals that acts as a switch or a current amplifier depending on its configuration. It is the active medium of an electrical circuit that ‘shapes’ the current waveform for different applications. It is an indispensable semiconductor component in modern circuits.
The 2SD1835T is a Silicon NPN Transistor, with its base, collector and emitter terminals. It is constructed of three semiconductor layers; a P-type layer sandwiched between the NPN layers. Its collector-base junction is reverse biased and the base-emitter junction is forward biased. When a small current at the emitter is applied (forward bias), this causes a large snow of electrons to flow from the emitter to the collector regions that is measured at output.This 2SD1835T has high collector-emitter voltage that is around 30V and a high hFE transistor gain of 893 to 848, depending on the manufacturer and quality. Current handling capability is at 0.5A continuous.
The primary operating principle of the 2SD1835T transistor is through the use of two PN junctions placed around a thin layer of P type silicon. When the base PN junction is given a positive voltage, current flows through the base. This, in turn, causes current to flow from the emitter to the collector, allowing subsequently higher current to flow from the collector. The transistors bias condition determines whether it can be used as a switch or for amplification purposes. This type of transistor is often used in audio amplifiers as well as other applications.
This 2SD1835T is designed for general purpose, amplifier and low power applications such as amplifying audio signals, power switching, amplifying radio signals, etc. It can also be used in various current and voltage regulation circuits. It is a reliable and robust transistor and common in use, being manufactured by several semiconductor giants.
This type of transistor is widely used in electronics and electrical systems in various applications and projects. Its primary application is as a voltage amplifier, where an input of small voltage is amplified by larger output voltage. It can be used for both linear and switching amplifications. It is generally used to amplify the input signals from a microphone or small circuit, so it can be heard from a speaker or observed from an oscilloscope. It is also used to provide amplification and switching with audio signals. It is an ideal choice to amplify the radio signals too.
Furthermore, it can be used in voltage-controlled circuits and current regulation mechanisms, such as electrical motors, LED dimmers and other circuits. Normally, it is connected to the source of the power and then connected to the electrical load for amplification. It can also be used as a switch, to control the current flowing in the circuit. It has been proven as an efficient control unit for many engineering and scientific applications.
To sum up, the 2SD1835T silicon NPN transistor is a reliable, robust and general-purpose transistor. With its collector-emitter voltage of 30V and a hFE transistor gain of 893 to 848, current handling capability of 0.5A it is suitable for many small-signal and medium-power amplifier applications. It is ideal for audio amplifiers, power switching, voltage and current regulation and linear/switching amplifications. It is an essential component of many electrical and mechanical circuits and applications.
The specific data is subject to PDF, and the above content is for reference
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