2SD19790SL

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The 2SD19790SL is a single-diffused Mesa NPN transistor specifically designed for use in audio amplifiers. As one of the most commonly used transistors on the market, the 2SD19790SL is a popular choice for use in both industrial and consumer applications. The transistor features an enhanced maximum frequency of 3.2GHz, as well as a maximum collector current of up to 5A.

The 2SD19790SL is a 12-pin transistor, with two leads for the base, two for the collector, and two for the emitter. The transistor\'s base voltage is 5V, and is typically used at forward current of up to 4A. The collector supply voltage is 10V, and the emitter supply voltage is 20V.

The majority of the power dissipation in the 2SD19790SL occurs within the collector-to-emitter junction, and is dissipated as heat. The transistor\'s design ensures that the maximum current handling capacity of the device is sufficient to support nearly any application. The device\'s thermal resistance junction-to-case is typically 2.4°C/W, and its maximum operating temperature is +150°C.

The 2SD19790SL transistor is a widely used device for audio amplifiers, with applications for everything from high-fidelity home-theater systems to professional-grade recording equipment. The transistor\'s wide bandwidth and high current-handling capacity make it an ideal choice for a variety of audio-amplifier designs. It can be used with both low- and high-impedance applications, providing excellent sound reproduction quality by minimizing distortion.

In addition to audio-amplifier applications, the 2SD19790SL is also used in power-supply circuits, due to its large collector current capacity. The transistor is commonly employed in AC-to-DC power converters, enabling the device to efficiently convert and deliver power at the required voltage. The transistor is typically used in the power-converter circuit in order to control the incoming current and voltage, ensuring that the device is able to safely operate within its specified parameters.

The working principle of the 2SD19790SL transistor is relatively simple. The proper application of current to the base of the transistor in an NPN configuration causes the collector current to increase and the collector-to-emitter voltage to decrease. This process is then reversed if the current is removed from the base. The current gain of the device is typically labeled as h_FE, and is measured in amperes per watt. For the 2SD19790SL, h_FE typically ranges from 1.5A/W to 4.5A/W.

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