2V7002KT1G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.3V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	300mW (Tj)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	24.5pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	0.7nC @ 4.5V
Series:	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:	1.6 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	320mA (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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2V7002KT1G Application Field and Working Principle

2V7002KT1G is a type of Field Effect Transistors, more specifically, it is a MOSFET or Metal Oxide Semiconductor Field Effect Transistor. MOSFETs are semiconductor devices that contain three or more terminals. The MOSFETs generally use a flow of electric current to control the drop of electric current, which is also known as the gate-to-source voltage (Vgs). A MOSFET is a single-gate device that can be used as either an amplifying or switching device, depending on the input voltage applied.2V7002KT1G is a Single-Gate MOSFET, and this design provides the most efficient operation. The single-gate MOSFET is faster than the dual-gate MOSFET because it only needs one gate and the gates are spaced closer together. It also requires lower power, as the need for two separate power supplies is eliminated.2V7002KT1G is an N-channel device and is used in many applications. It is commonly used in direct current (DC) power sources and can be an ideal solution for improving the efficiency of power supplies. It can also be found in low-voltage signal applications such as audio amplifiers and switch mode power supplies. 2V7002KT1G has a specific gate-source voltage of -5V and has an operating temperature range of -55°C to +150°C. The device has a drain-source voltage of 700V, and it has a continuous drain current rating of 2A. This device also has a very low gate-source capacitance rating of approximately 16pF, which means that it can be used in very sensitive, low power applications.The working principle of the 2V7002KT1G MOSFET is based on the movement of charge carriers in a semiconductor material. When a voltage is applied to the gate of the MOSFET, it creates a gate-to-source junction, which attracts negative electrons and allows them to flow from the source to the drain. This movement of electrons is what allows the device to amplify or switch current.To summarize, the 2V7002KT1G is a single-gate Metal Oxide Semiconductor Field Effect Transistor. It is an N-channel device and is mainly used for power supply applications and low-voltage signal applications. It has a drain-source voltage of 700V and a continuous drain current rating of 2A. The working principle of the 2V7002KT1G is based on the movement of charge carriers from the source to the drain when a voltage is applied to the gate.

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