2V7002LT1G Discrete Semiconductor Products |
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| Allicdata Part #: | 2V7002LT1GOSTR-ND |
| Manufacturer Part#: |
2V7002LT1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 60V 0.115A SOT-23-3 |
| More Detail: | N-Channel 60V 115mA (Tc) 225mW (Ta) Surface Mount ... |
| DataSheet: |  2V7002LT1G Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 225mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
| Vgs (Max): | ±20V |
| Series: | Automotive, AEC-Q101 |
| Rds On (Max) @ Id, Vgs: | 7.5 Ohm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 115mA (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The 2V7002LT1G is a single N-channel, E-grade power MOSFET designed for high power applications. It has a very low on-resistance and is designed to be stabilized with a PWM controller. It is capable of switching a maximum drain current of up to 5A and a maximum drain voltage of 20V, allowing it to be used in high power applications such as power supplies, motor control circuits, and even high power automotive applications.
Application Field
The 2V7002LT1G can be used in a variety of applications, such as:
- DC/DC converters
- Motor control
- Battery chargers
- Automotive applications
- Power supplies
The 2V7002LT1G is an ideal choice for high power applications due to its low on-resistance and ability to be driven by a PWM controller. It is also capable of switching a maximum drain current of up to 5A and a maximum drain voltage of 20V. This makes it suitable for use in power supplies, motor control circuits, and even high power automotive applications.
Working Principle
The 2V7002LT1G is a single N-channel MOSFET. It is made up of an N-type substrate and an insulated-gate structure. When the gate potential is low, the device is in its off-state, meaning that it does not conduct. When a positive gate potential is applied to the device, holes are injected into the N-type substrate, causing it to become conductive.
The on-resistance of the 2V7002LT1G is determined by the thickness of the N-type substrate, as well as the amount of holes injected into it. The device also has a high switching speed due to its insulated-gate structure, allowing it to switch quickly between its off and on states.
The 2V7002LT1G is designed to be driven by a PWM controller, which is capable of controlling the amount of gate potential applied to the device. This allows for precise control over the on-resistance of the device, as well as allowing for high power applications.
The specific data is subject to PDF, and the above content is for reference
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