2V7002LT3G Discrete Semiconductor Products

2V7002LT3G is a type of single, advanced high voltage MOSFET. It is one of the most popular transistors for power delivery and amplification applications. The device is designed for low gate charge and high frequency switching applications and produces fast switching characteristics. Its excellent on-resistance makes it suitable for a variety of switching and power electronics applications.The device consists of a cascode voltage divider gate, a vertical gate-drain coupling and a vertical gate-source coupling. It is constructed from a high density self-aligned process and is packaged in a low profile SOIC package. The package also provides high electrical insulation, minimizing the need for additional shielding.The 2V7002LT3G has several application fields due to its high performance, low power consumption and high reliability. The device is suitable for various power electronics applications such as switching current, DC-DC converters, AC-DC converters, active OR (over-voltage) and current limiting. It is also used in industrial, automotive and medical applications due to its low power consumption, low switching losses and high power efficiency.The working principle of the 2V7002LT3G is based on its field-effect structure. The device is basically a turn-on device, meaning that the gate is capable of turning the transistor on with a positive gate voltage. The transistor has a negative threshold voltage level, which means that it will not turn on until the gate voltage exceeds the threshold.When the gate voltage reaches the threshold, the device will begin to conduct. The current through the transistor can be controlled by adjusting the gate voltage. The voltage across the drain-source terminal will be equal to the gate voltage minus the threshold voltage. The gate-source voltage must be greater than the drain-source voltage for the device to turn on, thus restricting the amount of current that can flow through the device, effectively controlling the current through the device.The 2V7002LT3G has a high voltage rating and can withstand spikes of up to 20V. It also has a low drain-source on-resistance and a low gate-drain capacitance. This makes the device ideal for applications that require high frequency switching. Additionally, the 2V7002LT3G is a low-leakage type device and has very low gate leakage.In conclusion, the 2V7002LT3G is a high performance, low power consumption and high reliability single MOSFET. The device is suitable for various power electronics applications such as switching current, DC-DC converters, AC-DC converters and active OR current limiting and is also used in industrial, automotive and medical applications due to its low power consumption, low switching losses and high power efficiency. The device has a high voltage rating and can withstand spikes of up to 20V. It also has a low drain-source on-resistance and a low gate-drain capacitance, making it ideal for applications that require high frequency switching.

2V7002KT1G	ON Semicondu...	--	9000	MOSFET N-CH 60V 320MA SOT...
2V7002WT1G	ON Semicondu...	--	3000	MOSFET N-CH 60V 310MA SC7...
2V7002LT3G	ON Semicondu...	--	1000	MOSFET N-CH 60V .115AN-Ch...
2V7002LT1G	ON Semicondu...	--	1000	MOSFET N-CH 60V 0.115A SO...