
3SK264-5-TG-E Discrete Semiconductor Products |
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Allicdata Part #: | 3SK264-5-TG-EOSTR-ND |
Manufacturer Part#: |
3SK264-5-TG-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | FET RF 15V 200MHZ CP4 |
More Detail: | RF Mosfet N-Channel Dual Gate 6V 10mA 200MHz 23dB ... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel Dual Gate |
Frequency: | 200MHz |
Gain: | 23dB |
Voltage - Test: | 6V |
Current Rating: | 30mA |
Noise Figure: | 2.2dB |
Current - Test: | 10mA |
Power - Output: | -- |
Voltage - Rated: | 15V |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | 4-CP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 3SK264-5-TG-E is a robust metal-oxide-semiconductor field-effect transistor (MOSFET) which is primarily used for radio frequency (RF) applications. This component is highly efficient and versatile, able to support a range of applications ranging from switching, to amplifying different types of signals. Although the component might look simple in its package, it contains several important structural elements. Understanding the operation and characteristics of this component can help us in making the right decision when selecting transistors for a given project.
At a basic level, MOSFETs are three-terminal components, and their terminals are labeled gate, drain and source. The 3SK264-5-TG-E offers these three terminals, and is further enhanced to provide a robust and versatile package. The drain and the source are connected to the N-type MOSFET, and the gate is connected to the body of the component. All three terminals act as conduits for current, allowing the control of current flow from the source to the drain and, thus, controlling the voltage between the source and the drain.
In the 3SK264-5-TG-E, the RF signal is fed into the source, and the gate provides a control mechanism. The gate is biased so that it is able to control the flow of current from the source to the drain. In this way, it is possible to switch or otherwise manipulate the signal that is fed into the component. The same component can be used as an amplifier, due to its ability to control the current flow, thereby changing the resistance between the source and the drain, thus allowing the pass-through of more current.
Another important quality of the 3SK264-5-TG-E is its ability to handle high-power signals. The component is designed to handle high-frequency signals, ranging from low frequency RF signals for communication purposes to high frequency RF signals for power usage. as such, the component is highly efficient and able to handle high power signals without any significant loss of signal quality.
The 3SK264-5-TG-E is a versatile component that is suitable for a wide range of applications. It can be used as a switch, allowing the user to control the flow of current and manipulate it in different ways. It can also serve as an amplifier, allowing signals to increase significantly in strength as they pass through the component. Furthermore, the component is also suitable for use with high-frequency signals, allowing it to be used in both signal communications and power control applications. In this way, the component is able to provide an efficient and effective solution for a wide range of applications.
Overall, the 3SK264-5-TG-E is a robust and versatile component that can be used for a range of applications. Its ability to handle high power signals and its versatile design make it suitable for a range of projects. Furthermore, its three-terminal design provides for control, switching and current manipulation capabilities. This versatility makes it an ideal solution for many different applications.
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