3SK293(TE85L,F) Discrete Semiconductor Products |
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Allicdata Part #: | 3SK293(TE85LF)TR-ND |
Manufacturer Part#: |
3SK293(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | FET RF 12.5V 800MHZ USQ |
More Detail: | RF Mosfet N-Channel Dual Gate 6V 10mA 800MHz 22dB ... |
DataSheet: | 3SK293(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | N-Channel Dual Gate |
Frequency: | 800MHz |
Gain: | 22dB |
Voltage - Test: | 6V |
Current Rating: | 30mA |
Noise Figure: | 2.5dB |
Current - Test: | 10mA |
Power - Output: | -- |
Voltage - Rated: | 12.5V |
Package / Case: | SC-82A, SOT-343 |
Supplier Device Package: | USQ |
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The 3SK293 (TE85L,F) is a small signal N-channel field-effect transistor (FET) with a maximum frequency of about 3GHz. It is one of the most common type of FETs and is used in high frequency applications such as HF radio transmitting and receiving amplifiers, television sets, and variable gain amplifiers. It is also used in low noise amplifiers, low-frequency amplifiers, and in analog signal switching and control circuits.
The 3SK293 (TE85L,F) has an N-type gate, a drain terminal, and a source terminal. It also has a lead-mounted heat sink to ensure efficient heat dissipation. The maximum gain of this FET is 55 dB, and its power rating is 20 W.
The 3SK293 (TE85L,F) is a field-effect transistor that works on the principle of a gate voltage controlling the current through an N-type zone. When a negative voltage is applied to the gate, a current flows from the source to the drain. This current is inversely proportional to the gate voltage, and can be adjusted by increasing or decreasing the gate voltage. This is known as “gating” the FET. When a positive gate voltage is applied, the current inversely decreases and can be used to obtain a desired “on” or “off” state.
The 3SK293 (TE85L,F) is popular for its high power efficiency, high frequency operation, and low noise. It is usually manufactured using thin-film technology, which minimizes parasitic capacitance. This FET has a low noise figure and fast switching speeds, which make it suitable for high speed applications such as RF circuits. It can also be used in applications that require low-noise operation such as low frequency amplifiers and signal switching circuits.
In general, the 3SK293 (TE85L,F) is used in high-frequency applications such as HF radio transmitting and receiving amplifiers, television sets, variable gain amplifiers, low noise amplifiers, low-frequency amplifiers, and analog signal switching and control circuits. It is also used in instrumentation amplifiers and filters, particularly in electro sensitive devices where its features make it an excellent choice.
The 3SK293 (TE85L,F) is a commonly used transistor in the field of radio frequency technology. Its excellent characteristics such as its high power efficiency, high frequency operation, and low noise make it suitable for a wide range of RF applications. Its performance can be balanced between power efficiency and speed by selecting an appropriate gate percentage, which is determined by the skills of the experienced engineer.
The specific data is subject to PDF, and the above content is for reference
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