3SK291(TE85L,F) Discrete Semiconductor Products

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The 3SK291 (TE85L,F) device is an insulated gate field effect transistor (IGFET) with desirable properties for use in radio frequency (RF) applications. The performance of an IGFET is dependent on its modulation speed, excellent current handling capability, low noise and capacitance, and low power dissipation. The 3SK291 (TE85L,F) device exhibits all of these properties, making it a versatile choice for RF applications.

The 3SK291 (TE85L,F) device is a metal-oxide-semiconductor field effect transistor (MOSFET). A MOSFET is a four-terminal device composed of a body, a source, a drain, and a gate, where current flows from the source to the drain. The transistor operates on the principle of passing electric current through a thin insulating layer between a metal gate and the body. By passing a voltage through the gate, the potential of the body is changed, which in turn changes the conductivity of the channel between the source and drain.

The performance of an IGFET is largely determined by its transconductance, which is typically from around 0.5 to 4 mS. The 3SK291 (TE85L,F) device has a transconductance of 1.5 mS in normal operation. In addition, the device has a very low noise level, typically only around 6 nV/sqroot Hz, making it ideal for high-impedance applications. Another desirable feature of the device is its total parasitic capacitance, which is only around 0.07 pF. This further increases the device’s suitability for RF applications.

In addition, the 3SK291 (TE85L,F) device is capable of handling large currents, with a drain-source current of up to 1.6 A. Furthermore, the device has a high output resistance, typically around 3Ω, and features a very low power dissipation, with a power gain of only around 1 W (max).

The 3SK291 (TE85L,F) device is thus an ideal choice for RF applications, due to its excellent transconductance, low noise, low parasitic capacitance, high current handling capabilities, and low power dissipation. In addition, it is relatively inexpensive and can be easily incorporated into electronic designs.

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