3SK294(TE85L,F) Discrete Semiconductor Products |
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| Allicdata Part #: | 3SK294(TE85LF)TR-ND |
| Manufacturer Part#: |
3SK294(TE85L,F) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | FET RF 12.5V 500MHZ USQ |
| More Detail: | RF Mosfet N-Channel 6V 10mA 500MHz 26dB USQ |
| DataSheet: | 3SK294(TE85L,F) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | N-Channel |
| Frequency: | 500MHz |
| Gain: | 26dB |
| Voltage - Test: | 6V |
| Current Rating: | 30mA |
| Noise Figure: | 1.4dB |
| Current - Test: | 10mA |
| Power - Output: | -- |
| Voltage - Rated: | 12.5V |
| Package / Case: | SC-82A, SOT-343 |
| Supplier Device Package: | USQ |
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3SK294(TE85L,F) Application field and Working Principle
The 3SK294(TE85L,F) is a ultra-small size, low-noise 3.3 Volt dual-gate MOSFET. As a field-effect transistor, it has distinct advantages over other types of transistors when it comes to amplifying signals, especially at high frequencies. It has a wide variety of applications in consumer, communications and automotive electronics, such as cellular and wireless communications, RF amplifiers, satellite and cable TV, audio, video and gaming systems.
Basic Working Principle
Field-effect transistors like the 3SK294(TE85L,F) operate on the basic principle of controlling current flow through the device by manipulating the electric field applied to its gate. The field controls current through a semiconductor channel which is created by the field and conducted by the source-drain path. This provides a high degree of control over current flow and gain, allowing for the construction of highly efficient, high frequency circuits.
Application Field
The 3SK294(TE85L,F) is an ideal choice for low noise, high frequency applications, as it provides better gain than other types of transistors and requires less power to operate. It is primarily used in cellular and wireless communications, RF amplifiers, satellite and cable TV, audio, video and gaming systems, among other applications. For example, the 3SK294(TE85L,F) is used in automotive electronics, particularly in active antennas and in-car entertainment systems.
Additionally, the 3SK294(TE85L,F) is capable of handling high frequencies, making it an ideal choice for applications requiring a high degree of control and stability at high frequencies. It is also useful for phase-locked loops, used in radio and satellite receivers, as well as for RF amplifiers for low-noise filters, receivers and transmitters.
The 3SK294(TE85L,F) offers a wide range of advantages for high-frequency applications, including a low noise figure, high gain, low input capacitance, linear frequency response and low power consumption. This makes it an ideal choice for a variety of fields, including consumer, automotive, and telecommunications.
Conclusion
The 3SK294(TE85L,F) is a low-noise, low-power, ultra-small size MOSFET that offers a wide range of advantages for high-frequency applications. It is widely used in consumer, communications and automotive electronics, as well as for phase-locked loops, RF amplifiers, and low-noise filters, receivers and transmitters.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| 3SK294(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | FET RF 12.5V 500MHZ USQRF... |
| 3SK293(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | FET RF 12.5V 800MHZ USQRF... |
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3SK294(TE85L,F) Datasheet/PDF