3SK292(TE85R,F) Allicdata Electronics

3SK292(TE85R,F) Discrete Semiconductor Products

Allicdata Part #:

3SK292(TE85RF)TR-ND

Manufacturer Part#:

3SK292(TE85R,F)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 12.5 30MA SMQ
More Detail: RF Mosfet N-Channel Dual Gate 6V 10mA 500MHz 26dB ...
DataSheet: 3SK292(TE85R,F) datasheet3SK292(TE85R,F) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: N-Channel Dual Gate
Frequency: 500MHz
Gain: 26dB
Voltage - Test: 6V
Current Rating: 30mA
Noise Figure: 1.4dB
Current - Test: 10mA
Power - Output: --
Voltage - Rated: 12.5V
Package / Case: SC-61AA
Supplier Device Package: SMQ
Description

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3SK292 (TE85R,F) is a type of Field Effect Transistor (FET). FETs are a type of transistor that uses an electrostatic field to control the electrical flow, rather than using current or voltage. FETs have a few unique characteristics, such as high input impedance, low gain, low output capacitance, and low gate capacitance, that make them ideal for use in RF applications. 3SK292 is a type of FET specifically designed for RF applications.

The main application of 3SK292 is in the radio frequency (RF) range. It can be used in many different types of RF applications, including radio communication, television broadcast, and other RF devices. It is also commonly used in wireless applications, such as Bluetooth and Wi-Fi devices. 3SK292 is also used in other applications, such as switching power supplies, motor control, and other consumer electronics.

The working principle of 3SK292 is based on the fact that it can be used as a switching device, which means it can be used to control the current flow in an electrical circuit. It consists of two terminals, a drain and a source, connected to the power source. A small voltage applied across the source and drain leads to a large current flow between the two terminals. In addition, the drain-source voltage determines the amount of current flow through the FET. The higher the voltage applied between the source and drain, the greater the current that will flow and the lower the resistance.

The advantage of using 3SK292 as a switching device is that it has high switching speed, low power consumption, and low noise. It is also highly reliable, which makes it suitable for use in RF applications. In addition, 3SK292 is capable of handling a wide range of frequencies, making it suitable for a variety of applications.

In conclusion, 3SK292 (TE85R,F) is a type of field effect transistor that is specifically designed for RF applications. It has high switching speed, low power consumption, and low noise, which makes it ideal for use in many different types of RF applications, including radio communication, television broadcast, and other RF devices. In addition, 3SK292 is capable of handling a wide range of frequencies, making it suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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