3SK292(TE85R,F) Discrete Semiconductor Products |
|
Allicdata Part #: | 3SK292(TE85RF)TR-ND |
Manufacturer Part#: |
3SK292(TE85R,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 12.5 30MA SMQ |
More Detail: | RF Mosfet N-Channel Dual Gate 6V 10mA 500MHz 26dB ... |
DataSheet: | 3SK292(TE85R,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | N-Channel Dual Gate |
Frequency: | 500MHz |
Gain: | 26dB |
Voltage - Test: | 6V |
Current Rating: | 30mA |
Noise Figure: | 1.4dB |
Current - Test: | 10mA |
Power - Output: | -- |
Voltage - Rated: | 12.5V |
Package / Case: | SC-61AA |
Supplier Device Package: | SMQ |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
3SK292 (TE85R,F) is a type of Field Effect Transistor (FET). FETs are a type of transistor that uses an electrostatic field to control the electrical flow, rather than using current or voltage. FETs have a few unique characteristics, such as high input impedance, low gain, low output capacitance, and low gate capacitance, that make them ideal for use in RF applications. 3SK292 is a type of FET specifically designed for RF applications.
The main application of 3SK292 is in the radio frequency (RF) range. It can be used in many different types of RF applications, including radio communication, television broadcast, and other RF devices. It is also commonly used in wireless applications, such as Bluetooth and Wi-Fi devices. 3SK292 is also used in other applications, such as switching power supplies, motor control, and other consumer electronics.
The working principle of 3SK292 is based on the fact that it can be used as a switching device, which means it can be used to control the current flow in an electrical circuit. It consists of two terminals, a drain and a source, connected to the power source. A small voltage applied across the source and drain leads to a large current flow between the two terminals. In addition, the drain-source voltage determines the amount of current flow through the FET. The higher the voltage applied between the source and drain, the greater the current that will flow and the lower the resistance.
The advantage of using 3SK292 as a switching device is that it has high switching speed, low power consumption, and low noise. It is also highly reliable, which makes it suitable for use in RF applications. In addition, 3SK292 is capable of handling a wide range of frequencies, making it suitable for a variety of applications.
In conclusion, 3SK292 (TE85R,F) is a type of field effect transistor that is specifically designed for RF applications. It has high switching speed, low power consumption, and low noise, which makes it ideal for use in many different types of RF applications, including radio communication, television broadcast, and other RF devices. In addition, 3SK292 is capable of handling a wide range of frequencies, making it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
3SK294(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | FET RF 12.5V 500MHZ USQRF... |
3SK292(TE85R,F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 12.5 30MA SMQ... |
3SK291(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH SMQRF Mosfet ... |
3SK293(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | FET RF 12.5V 800MHZ USQRF... |
3SK263-5-TG-E | ON Semicondu... | -- | 1000 | FET RF 15V 200MHZ CP4RF M... |
3SK264-5-TG-E | ON Semicondu... | -- | 1000 | FET RF 15V 200MHZ CP4RF M... |
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...