70T631S12BCI Allicdata Electronics
Allicdata Part #:

70T631S12BCI-ND

Manufacturer Part#:

70T631S12BCI

Price: $ 89.39
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 256CABGA
More Detail: SRAM - Dual Port, Asynchronous Memory IC 4.5Mb (25...
DataSheet: 70T631S12BCI datasheet70T631S12BCI Datasheet/PDF
Quantity: 1000
12 +: $ 81.26580
Stock 1000Can Ship Immediately
$ 89.39
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 4.5Mb (256K x 18)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)
Base Part Number: IDT70T631
Description

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The 70T631S12BCI Memory belongs to a special class of memories known as Static Random Access Memory (SRAM). SRAM memories differ from other memories in their usage of multiple transistors for each bit of storage. While other memories rely on the storage of data on capacitors, SRAM stores its contents in the form of charge on a transistor, making it much faster than other types of memory. This makes SRAM an ideal choice for applications where speed and reliability are paramount.

The 70T631S12BCI Memory is a high-speed, high-density static random access memory (SRAM) that provides true static, low-power operation. It is suitable for applications ranging from high performance digital signal processing and microcontrollers to medical devices and industrial automation. The 70T631S12BCI features multiple low-power easy interface controls, providing users an easy and convenient way to access its content.

The 70T631S12BCI Memory works on a Static RAM (SRAM) technology. SRAM is a type of random access memory that stores each bit of data in a separate transistor module. These modules act as a kind of "memory cells", storing the binary 1s and 0s of the data. As these cells are all held in a constant, low power state, the 70T631S12BCI Memory can operate with lower power consumption than other RAM technologies.

The 70T631S12BCI Memory\'s working principle is based on a single-ended, asynchronous read/write process. When writing data, the user loads the data into the memory\'s Input/Output registers. These registers hold up to 256-bits of data, which is then sent to the array of SRAM cells that make up the actual memory. Once the data is successfully written, the memory will output an acknowledgment signal that passes back to the user\'s circuit, indicating successful completion of the write. The same principle applies to reading, where data is transferred from the SRAM cells back to the I/O registers, and the data is then passed out of the memory.

The 70T631S12BCI Memory can be used in many different applications. It is ideal for high-speed digital signal processing (DSP), medical imaging, and industrial automation. It is also highly suitable for any application where low power consumption is important. The memory is also reliable and offers a low risk of data corruption, making it a reliable choice for any application.

In summary, the 70T631S12BCI Memory is a high-performance, low-power, reliable Static RAM (SRAM) that can be used in a variety of applications. Its single-ended, asynchronous read/write process makes it easy to use and its low power consumption makes it ideal for applications where power efficiency is important. The 70T631S12BCI Memory can offer reliable storage for any application and its multiple low-power easy interface controls make it easy to access its content.

The specific data is subject to PDF, and the above content is for reference

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